Enhanced velocity overshoot and transconductance in Si/Si0.64Ge0.36/Si pMOSFETs - Predictions for deep submicron devices

European Solid-State Device Research Conference

Volumn , Issue , 2001, Pages 199-202

  Palmer, M J ^a   Braithwaite, G ^a   Prest, M J ^a   Parker, E H C ^a   Whall, T E ^a   Zhao, Y P ^b   Kaya, S ^b   Watling, J R ^b   Asenov, A ^b   Barker, J R ^b   Waite, A M ^c   Evans, A G R ^c  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP SUBMICRON DEVICE; P-MOSFETS; VELOCITY OVERSHOOT;

EID: 84907517582     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2001.195235     Document Type: Conference Paper

References (16)

1. T. E. Whall and E. H. C. Parker, "SiGe heterostructures for FET applications" J. Phys. D. Vol 31, 1998, pp. 1397-1416.
2. S. P. Voignegescu, C. A. T. Salama, J. P. Noel, and T. L. Kamins, "Si/SiGe Heterostructure p-MOSFET with Triangular Ge Channel Profiles", Proc. International Elec. Device Meeting (IEDM), New York, 1994, pp. 369.
3. T. Vogelsang, F. Hofmann, H. Schäfer, L. Risch and K. Hofmann, "Modelling and Fabrication of a P-Channel SiGe-MOSFET with Very High Mobility and Transconductance", Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 1994, pp. 877-879.
4. V. P. Kesan, S. Subbanna, P. J. Restle, M. J. Tejwani, J. M. Aitken, S. S. Iyer and J. A. Ott, "High Performance 0. 25 μm p-MOSFETs with Silicon-Germanium Channels for 300K and 77K Operation", Proc. International Elec. Device Meeting (IEDM), 1991, pp. 25-28.
5. J. Alieu, T. Skotnikii, J. L. Regoli and G. Bremond, "Multiple SiGe Quantum Wells-Novel Channel Architecture for 0. 12μm CMOS", Proc. of 29th European Solid-state Device Research Conference (ESSDERC), Leuven, Belgium, Sept 1999, pp. 292-295.
6. Y. C. Yeo, V. Sabramanian, J. Kedzierski, P. Xuan, T.-J. King, J. Bokor and C. Hu, "Nanoscale Ultra-Thin-Body Silicon-on-Insulator p-MOSFET with SiGe/Si Heterostructure Channel", IEEE Electron Device Lett., Vol 21, 2000, pp. 161-163.
7. S. Kaya, Y. P. Zhao, J. R. Watling, A. Asenov, J. R. Barker, G. Ansaripour, G. Braithwaite, T. E. Whall and E. H. C. Parker, "Indication of Velocity Overshoot in Strained Si0. 8Ge0. 2 p-Channel MOSFETs", Semi. Sci. Tech., Vol 15, 2000, pp. 573-578.
8. Y. P. Zhao, S. Kaya, J. R. Watling, A. Asenov, J. R. Barker, M. Palmer, G. Braithwaite, T. E. Whall, E. H. C. Parker, A. Waite and A. G. R. Evans, "Indication of Nonequilibrium Transport in SiGe p-MOSFETs", Proc. of 30th European Solid-state Device Research Conference (ESSDERC), Cork, Ireland, 11-13 Sep 2000,. pp. 224-227.
9. M. J. Palmer, G. Braithwaite, T. J. Grasby, P. J. Phillips, M. J. Prest, E. H. C. Parker, T. E. Whall, C. P. Parry, A. M. Waite, A. G. R. Evans, S. Roy, J. R. Watling, S. Kaya and A. Asenov, "Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers", Appl. Phys. Letters, Vol 78, 2001, pp. 1424-1426.
10. MEDICI from Avant! Corporation, http://www. avanticorp. com/, Fremont, CA.
11. T. E. Whall and E. H. C. Parker, "Si/SiGe/Si pMOS performance-alloy scattering and other considerations", Thin Solid Films, Vol 369, 2000, pp. 297-305.
12. M. J. Kearney and A. I. Horrell, "The effect of alloy scattering on the mobility of holes in a Si1-xGex quantum well", Semi. Sci. Tech., Vol 13, 1998, pp. 174-180.
13. J. M. Hinckley and J. Singh, "Hole Transport Theory in Pseudomorphic Si1-xGex Alloys Grown on Si(001) Substrates", Phys. Rev. B, Vol 41, 1990, pp. 2912-2926.
14. F. M. Bufler and B. Meinerzhagen, "Hole transport in strained Si1-xGex alloys on Si1-yGey substrates", J. Applied Physics, Vol 84, 1998, pp. 5597-5602.
15. J. B. Roldan, F. Gamiz, J. A. Lopez-Villanueva and J. E. Carceller, "Modeling Effects of Electron-Velocity Overshoot in a MOSFET", IEEE Trans. Electron Devices, Vol 44, 1997, pp. 841-846.
16. K. K. Thornber, "Currrent Equations for Velocity Overshoot", IEEE Electron Device Lett., Vol 3, 1982, pp. 69-71.