Room-temperature high-frequency transport of Dirac fermions in epitaxially grown Sb2 Te3 - And Bi2 Te3 -based topological insulators

Physical Review Letters

Volumn 113, Issue 9, 2014, Pages

  Olbrich, P ^a   Golub, L E ^b   Herrmann, T ^a   Danilov, S N ^a   Plank, H ^a   Bel'Kov, V V ^b   Mussler, G ^c   Weyrich, Ch ^c   Schneider, C M ^c   Kampmeier, J ^c   Grutzmacher D ^c   Plucinski, L ^c   Eschbach, M ^c   Ganichev, S D ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c Section JARA FIT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS;

ASYMMETRIC SCATTERING; DC ELECTRIC CURRENTS; ELECTRON TRANSPORT; EPITAXIALLY GROWN; HIGH-FREQUENCY TRANSPORT; PHOTOGALVANIC EFFECTS; ROOM TEMPERATURE; TOPOLOGICAL INSULATORS;

ELECTRIC INSULATORS;

EID: 84907353245     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.113.096601     Document Type: Article

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