Quantum tunneling through planar p-n junctions in HgTe quantum wells

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Zhang, L B ^a   Chang, Kai ^a   Xie, X C ^b   Buhmann, H ^c   Molenkamp, L W ^c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b OKLAHOMA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EDGE STATE; FERMI ENERGY; GATE VOLTAGES; INCIDENCE ANGLES; INTERBAND TUNNELING; P-N JUNCTION; QUANTUM TUNNELING; QUANTUM WELL; QUASI-ONE-DIMENSIONAL; RASHBA SPIN-ORBIT INTERACTIONS; SPIN ORIENTATIONS;

TOPOLOGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77956575828     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/8/083058     Document Type: Article

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