Wide-gap a-Si1-xCx:H solar cells with high light-induced stability for multijunction structure applications

Solar Energy Materials and Solar Cells

Volumn 95, Issue 1, 2011, Pages 107-110

  Yunaz, Ihsanul Afdi ^a   Nagashima, Hiroshi ^a   Hamashita, Daisuke ^a   Miyajima, Shinsuke ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Amorphous silicon carbide; Light stability; Monomethyl silane; Solar cell; VHF PECVD

Indexed keywords

CARBON SOURCE; DEGRADATION BEHAVIOR; DEVICE STRUCTURES; EFFICIENCY DEGRADATION; FILL FACTOR; I-LAYER; INTERMEDIATE LAYERS; LIGHT STABILITY; MONOMETHYL SILANE; MULTI JUNCTION SOLAR CELLS; MULTI-JUNCTION STRUCTURES; TANDEM CELLS; VHF-PECVD; WIDE GAP;

BUFFER LAYERS; CYTOLOGY; DEGRADATION; FABRICATION; OPTIMIZATION; SILICON CARBIDE; SILICON OXIDES; SOLAR CELLS; STABILITY;

AMORPHOUS SILICON;

EID: 78149295054     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.04.039     Document Type: Conference Paper

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