A k·p model of InAs/GaSb type II superlattice infrared detectors

Infrared Physics and Technology

Volumn 59, Issue , 2013, Pages 53-59

  Klipstein, P C ^a   Livneh, Y ^b   Klin, O ^a   Grossman, S ^a   Snapi, N ^a   Glozman, A ^a   Weiss, E ^a  

^a SCD Semiconductor Devices Ltd   (Israel)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

InAs GaSb superlattice; Infrared detector; k p theory; Kane model; pBp detector; Type II superlattice

Indexed keywords

DEFORMATION POTENTIAL; EXPERIMENTAL UNCERTAINTY; INAS/GASB SUPERLATTICES; INAS/GASB TYPE-II SUPERLATTICES; KANE MODEL; SUPER-LATTICE STRUCTURES; SUPERLATTICE PERIODS; TYPE-II SUPERLATTICES;

ABSORPTION SPECTRA; ABSORPTION SPECTROSCOPY; DETECTORS; ENERGY GAP; HAMILTONIANS; INDIUM ANTIMONIDES; INFRARED DETECTORS; MONOLAYERS; REGULATORY COMPLIANCE;

SUPERLATTICES;

EID: 84878377139     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2012.12.009     Document Type: Article

References (27)

1. D.J. Ben Daniel, and C.B. Duke Space-charge effects on electron tunneling Phys. Rev. 152 1966 683
2. E.O. Kane Energy band structure in p-type Germanium and Silicon J. Phys. Chem. Solids 1 1956 82
3. Semiconductors and semimetals, The k·p Method, 1 (1966) 75.
4. J.M. Luttinger Quantum theory of cyclotron resonance in semiconductors: general theory Phys. Rev. 102 1956 1030
5. B.A. Foreman First-principles envelope-function theory for lattice-matched semiconductor heterostructures Phys. Rev. B 72 2005 165345
6. G. Dente, and M. Tilton Comparing pseudopotential predictions for InAs/GaSb superlattices Phys. Rev. B 66 2002 165307
7. É.E. Takhtamirov, and V.A. Volkov Envelope function method for the conduction band in graded heterostructures Semicond. Sci. Technol. 12 1997 77
8. V.A. Volkov, and É.E. Takhtamirov Dynamics of an electron with space-dependent mass and the effective mass method for semiconductor heterostructures Phys.-Uspekhi 40 1997 1071
9. É.E. Takhtamirov, and V.A. Volkov Generalization of the effective mass method for semiconductor structures with atomically sharp heterojunctions JETP 89 1999 1000
10. P.C. Klipstein Operator ordering and interface band mixing in the Kane like Hamiltonian of lattice matched semiconductor superlattices with abrupt interfaces Phys. Rev. B 81 2010 235314
11. D. Gershoni, C.H. Henry, and G.A. Baraff Calculating the optical properties of multidimensional heterostrcutures: application to the modeling of quaternary quantum well lasers IEEE J. Quantum. Electron. 29 1993 2433
12. I.L. Alener, and E.L. Ivchenko Anisotropic exchange splitting in type II GaAs/AlAs superlattices JETP Lett. 55 1992 692
13. O. Krebs, and P. Voisin Giant optical anisotropy of semiconductor heterostructures with no common atom and the quantum-confined pockels effect Phys. Rev. Lett. 77 1996 1829
14. B.A. Foreman Analytical envelope-function theory of interface band mixing Phys. Rev. Lett. 81 1998 425
15. M. Cardona Band parameters of semiconductors with zincblende, wurtzite and germanium structure J. Phys. Chem. Solids 24 1963 1543
16. K.H. Hellwege, O. Madelung (Eds.), Physics of group IV elements and III-V compounds, Landolt Börnstein New Series, Group III, vol. 17, Springer Verlag, Berlin, 1982.
17. O. Madelung (Ed.), Intrinsic properties of group IV elements and III-V, II-VI and I-VIII compounds, Landolt Börnstein New Series, Group III, vol. 22, Springer Verlag, Berlin, 1987.
18. P. Lawaetz Valence band parameters in cubic semiconductors Phys Rev. B 4 1971 3460
19. Y. Livneh, P.C. Klipstein, O. Klin, N. Snapi, S. Grossman, A. Glozman, and E. Weiss A k·p model for the energy dispersions and absorption spectra of InAs/GaSb type II superlattices Phys. Rev. B 86 2012 235311
20. I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan Band parameters for III-V compound semiconductors and their alloys J. Appl. Phys. 89 2001 5815 (Pubitemid 32886908)
21. xSb infrared photodiodes J. Appl. Phys. 71 1997 3251
22. J. Lekner Theory of Reflection 1987 Springer Verlag Berlin
23. P.C. Klipstein, O. Klin, S. Grossman, N. Snapi, B. Yaakobovitz, M. Brumer, I. Lukomsky, D. Aronov, M. Yassen, B. Yofis, A. Glozman, T. Fishman, E. Berkowicz, O. Magen, I. Shtrichman, and E. Weiss XBn barrier detectors for high operating temperatures Proc. SPIE 7608 2010 7608-1V
24. P.C. Klipstein, D. Aronov, E. Berkowicz, R. Fraenkel, A. Glozman, S. Grossman, O. Klin, I. Lukomsky, I. Shtrichman, N. Snapi, M. Yassen, E. Weiss, Reducing the cooling requirements of mid-wave IR detector arrays, SPIE Newsroom, 2011 (doi: 10.1117/2.1201111.003919).
25. P.C. Klipstein, O. Klin, S. Grossman, N. Snapi, I. Lukomsky, M. Yassen, D. Aronov, E. Berkowicz, A. Glozman, T. Fishman, O. Magen, I. Shtrichman, and E. Weiss XBn barrier photodetectors based on InAsSb with high operating temperatures J. Opt. Eng. 5 2011 061002
26. P.C. Klipstein, Depletionless photodiode with suppressed dark current, US Patent 7,795,640, 2 July, 2003.
27. P.C. Klipstein, Unipolar semiconductor photodetector with suppressed dark current., US Patent 8,004,012, 6 April, 2006.