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Volumn 8268, Issue , 2012, Pages

High operating temperature XBn-InAsSb bariode detectors

Author keywords

Bariode; Focal Plane Array; High Operating Temperature; InAsSb; Infrared Detector; nBn; pBp; Type II superlattice; XBn; XBp

Indexed keywords

BARIODE; FOCAL PLANE; HIGH OPERATING TEMPERATURE; INASSB; NBN; PBP; TYPE-II SUPERLATTICES; XBN; XBP;

EID: 84856849087     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.910174     Document Type: Conference Paper
Times cited : (41)

References (16)
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  • 3
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    • Statistics of the recombinations of holes and electrons
    • W. Shockley and W. T. Read, Statistics of the recombinations of holes and electrons, Phys. Rev. 87, pp. 835-842, 1952;
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    • Shockley, W.1    Read, W.T.2
  • 4
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    • Electron hole recombination in germanium
    • R. N. Hall, Phys. Rev. 87, Electron hole recombination in germanium, pp387-387 (1952)
    • (1952) Phys. Rev. , vol.87 , pp. 387-387
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  • 6
    • 45549091647 scopus 로고    scopus 로고
    • Depletionless Photodiode with Suppressed Dark Current
    • US Patent 7,795,640 2 July
    • P.C. Klipstein, Depletionless Photodiode with Suppressed Dark Current..., US Patent 7,795,640 (2 July 2003)
    • (2003)
    • Klipstein, P.C.1
  • 7
    • 84856884845 scopus 로고    scopus 로고
    • Unipolar semiconductor photodetector with Suppressed Dark Current
    • US Patent 8,004,012 6 April
    • P.C. Klipstein, Unipolar semiconductor photodetector with Suppressed Dark Current..., US Patent 8,004,012 (6 April 2006)
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  • 8
    • 84856916038 scopus 로고    scopus 로고
    • In 1919, William Henry Eccles coined the term diode from the Greek roots dia, meaning "through", and ode (from o{combining double acute accent}δoζ), meaning "path" Bariode is a portmanteau of the term "barrier diode" that describes a semiconductor photo-detector in which a clear path through the device is provided for minority carriers from the photon absorbing layer, while the path of its majority carriers is blocked by means of a barrier. An n-type bariode has an n-type photon absorbing layer and barrier layer, while in a p-type bariode, their polarities are reversed
    • In 1919, William Henry Eccles coined the term diode from the Greek roots dia, meaning "through", and ode (from o{combining double acute accent}δoζ), meaning "path" (http://en.wikipedia.org/wiki/ Diode#History). Bariode is a portmanteau of the term "barrier diode" that describes a semiconductor photo-detector in which a clear path through the device is provided for minority carriers from the photon absorbing layer, while the path of its majority carriers is blocked by means of a barrier. An n-type bariode has an n-type photon absorbing layer and barrier layer, while in a p-type bariode, their polarities are reversed.
  • 9
    • 45549091834 scopus 로고    scopus 로고
    • XBn Barrier Photodetectors for High Sensitivity and High Operating Temperature Infrared Sensors
    • P.C. Klipstein, XBn Barrier Photodetectors for High Sensitivity and High Operating Temperature Infrared Sensors, Proc. SPIE 6940, 6940-2U (2008)
    • (2008) Proc. SPIE , vol.6940
    • Klipstein, P.C.1
  • 10
    • 80052991849 scopus 로고    scopus 로고
    • High Operating Temperature MWIR photon detectors based on Type II InAs/GaSb superlattice
    • M. Razeghi, S. Abdollahi Pour, E.Huang, G. Chen, A. Haddadi, and B-M Nguyen, High Operating Temperature MWIR photon detectors based on Type II InAs/GaSb superlattice, Proc. SPIE 8012, 8012-2Q (2011)
    • (2011) Proc. SPIE , vol.8012
    • Razeghi, M.1    Abdollahi Pour, S.2    Huang, E.3    Chen, G.4    Haddadi, A.5    Nguyen, B.-M.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.