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In 1919, William Henry Eccles coined the term diode from the Greek roots dia, meaning "through", and ode (from o{combining double acute accent}δoζ), meaning "path" Bariode is a portmanteau of the term "barrier diode" that describes a semiconductor photo-detector in which a clear path through the device is provided for minority carriers from the photon absorbing layer, while the path of its majority carriers is blocked by means of a barrier. An n-type bariode has an n-type photon absorbing layer and barrier layer, while in a p-type bariode, their polarities are reversed
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In 1919, William Henry Eccles coined the term diode from the Greek roots dia, meaning "through", and ode (from o{combining double acute accent}δoζ), meaning "path" (http://en.wikipedia.org/wiki/ Diode#History). Bariode is a portmanteau of the term "barrier diode" that describes a semiconductor photo-detector in which a clear path through the device is provided for minority carriers from the photon absorbing layer, while the path of its majority carriers is blocked by means of a barrier. An n-type bariode has an n-type photon absorbing layer and barrier layer, while in a p-type bariode, their polarities are reversed.
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P.C. Klipstein, O. Klin, S. Grossman, N. Snapi, I. Lukomsky, M. Brumer, M. Yassen, D. Aronov, E. Berkowicz, A.Glozman, T. Fishman, O. Magen, I. Shtrichman, and E. Weiss, MWIR InAsSb XBnn detector (bariode) arrays operating at 150K, Proc. SPIE 8012, 8012-2R (2011)
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Philip Klipstein, Olga Klin, Steve Grossman, Noam Snapi, Inna Lukomsky, Michael Yassen, Daniel Aronov, Eyal Berkowitz, Alex Glozman, Tal Fishman, Osnat Magen, Itay Shtrichman, and Eliezer Weiss, "XBn barrier Photodetectors based on InAsSb with high operating temperatures", Journal of Optical Engineering 50, 061002 (2011)
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