Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions

Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

  Kodzuka, M ^a   Ohkubo, T ^b   Hono, K ^a,b   Ikeda, S ^c   Gan, H D ^c   Ohno, H ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; MAGNETIC TUNNEL JUNCTION; MGO; MGO BARRIER; PSEUDO-SPIN VALVES; ROOM TEMPERATURE; TUNNELING MAGNETORESISTANCE;

BORON; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETORESISTANCE;

MAGNETIC DEVICES;

EID: 84857819099     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3688039     Document Type: Article

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