Boron composition dependence of magnetic anisotropy and tunnel magnetoresistance in MgO/CoFe(B) based stack structures

IEEE Transactions on Magnetics

Volumn 48, Issue 11, 2012, Pages 3829-3832

  Ikeda, Shoji ^a   Koizumi, Ryohei ^a   Sato, Hideo ^a   Yamanouchi, Michihiko ^a   Miura, Katsuya ^a,b   Mizunuma, Kotaro ^a   Gan, Huadong ^a   Matsukura, Fumihiro ^a   Ohno, Hideo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

CoFeB composition; MgO barrier; perpendicular magnetic anisotropy; tunnel magnetoresistance

Indexed keywords

ANNEALING TEMPERATURES; COFEB FILM; COMPOSITION DEPENDENCE; DEMAGNETIZATION ENERGY; EASY AXIS OF MAGNETIZATION; EFFECTIVE MAGNETIC ANISOTROPY; INTERFACE ANISOTROPY; LAYER THICKNESS; MAGNETIC ANISOTROPY ENERGY; MGO; MGO BARRIER; PERPENDICULAR MAGNETIC ANISOTROPY; STACK STRUCTURE; TUNNEL MAGNETORESISTANCE;

ANNEALING; BORON; COBALT COMPOUNDS; DEMAGNETIZATION; MAGNETIC ANISOTROPY; MAGNETIC DEVICES; MAGNETORESISTANCE;

STRUCTURE (COMPOSITION);

EID: 84867828281     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2012.2203588     Document Type: Article

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