N-Si-organic inversion layer interfaces: A low temperature deposition method for forming a p-n homojunction in n-Si

Advanced Energy Materials

Volumn 4, Issue 9, 2014, Pages

  Erickson, Ann S ^a   Zohar, Arava ^a   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

conducting polymers; field effect transistors; inversion layers; solar cells

Indexed keywords

CONDUCTING POLYMERS; FIELD EFFECT TRANSISTORS; INVERSION LAYERS; SOLAR CELLS;

DONOR CONCENTRATIONS; HIGH WORK FUNCTION; HYBRID SOLAR CELLS; LAYER INTERFACES; LOW-TEMPERATURE DEPOSITION; P-N HOMOJUNCTIONS; POLY(3 ,4-ETHYLENEDIOXYTHIOPHENE):POLY(STYRENESULFONATE); SOURCE AND DRAIN ELECTRODES;

SILICON;

EID: 84903540358     PISSN: 16146832     EISSN: 16146840     Source Type: Journal    
DOI: 10.1002/aenm.201301724     Document Type: Article

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