Simulation of electronic transport in silicon nanocrystal solids

Journal of Physical Chemistry C

Volumn 116, Issue 20, 2012, Pages 10873-10880

  Lepage, Hadrien ^a,c   Kaminski Cachopo, Anne ^b   Poncet, Alain ^c   Le Carval, Gilles ^a  

^a CEA GRENOBLE   (France)

^b IMEP LAHC   (France)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED KINETICS; ARBITRARY DEGREE; CHARGING ENERGIES; COULOMBIC REPULSION; ELECTRON TRANSFER; ELECTRONIC COUPLING; ELECTRONIC TRANSPORT; HOPPING TRANSPORT; INELASTIC HOPPING; MARCUS THEORY; NANOCRYSTAL SIZES; PBSE NANOCRYSTALS; POLARONIC EFFECTS; POSITIONAL DISORDER; ROOM TEMPERATURE; SILICON NANOCRYSTALS; TEMPERATURE-DEPENDENT MEASUREMENTS; THERMALLY ACTIVATED MECHANISMS; TRANSPORT MEASUREMENTS;

ELECTRON MOBILITY; NANOCRYSTALS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; SILICON OXIDES;

MEASUREMENTS;

EID: 84861503209     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp301713v     Document Type: Article

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