Bromine doping of multilayer graphene for low-resistance interconnects

Japanese Journal of Applied Physics

Volumn 53, Issue 5 SPEC. ISSUE 2, 2014, Pages

  Ueno, Kazuyoshi ^a   Kosugi, Ryosuke ^a   Imazeki, Kazuya ^a   Aozasa, Akihiko ^a   Matsumoto, Yuji ^a   Miyazaki, Hisao ^b   Sakuma, Naoshi ^b   Kajita, Akihiro ^b   Sakai, Tadashi ^b  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

^b Low power Electronics Association and Project LEAP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BROMINE; CARRIER CONCENTRATION; FERMI LEVEL; GRAPHENE; MULTILAYERS; SHEET RESISTANCE; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

BR CONCENTRATIONS; CARRIER DOPING; FERMI-LEVEL SHIFTS; HIGH-RELIABILITY; HIGHLY ORIENTED PYROLYTIC GRAPHITE; INTERCONNECT MATERIALS; MULTILAYER GRAPHENE; NANOSCALE INTERCONNECTS;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84903305342     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.05GC02     Document Type: Article

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