SCOPUS 정보 검색 플랫폼

Physica Status Solidi - Rapid Research Letters

Volumn 8, Issue 6, 2014, Pages 540-544

On the SET/RESET current asymmetry in electrochemical metallization memory cells

(2) Menzel, Stephan a Waser, Rainer a,b

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b RWTH AACHEN UNIVERSITY (Germany)

Author keywords

Device simulation; Electrochemical metallization memory; ReRAM

Indexed keywords

CONDENSED MATTER PHYSICS; MATERIALS SCIENCE;

DEVICE SIMULATIONS; ELECTROCHEMICAL METALLIZATION (ECM); METALLIC FILAMENTS; RERAM; RESET CURRENTS; RESISTIVE STATE; RESISTIVE SWITCHING; SWITCHING MODEL;

METALLIZING;

EID: 84902661601 PISSN: 18626254 EISSN: 18626270 Source Type: Journal
DOI: 10.1002/pssr.201308310 Document Type: Article

Times cited : (15)

References (14)

1
- 84873649755
- I. Valov and M. N. Kozicki, J. Phys. D, Appl. Phys. 46, 074005 (2013).
- (2013) J. Phys. D, Appl. Phys. , vol.46 , pp. 074005
- Valov, I.¹ Kozicki, M.N.²

2
- 84855463299
- T. Hasegawa, K. Terabe, T. Tsuruoka, and M. Aono, Adv. Mater. 24, 252-267 (2012).
- (2012) Adv. Mater. , vol.24 , pp. 252-267
- Hasegawa, T.¹ Terabe, K.² Tsuruoka, T.³ Aono, M.⁴

3
- 84902806468
- 2011 IEEE International Electron Devices Meeting (IEDM) 30.2.1-30.2.4
- M. Tada, T. Sakamoto, M. Miyamura, N. Banno, K. Okamoto, N. Iguchi, T. Nohisa, and H. Hada, 2011 IEEE International Electron Devices Meeting (IEDM), pp. 30.2.1-30.2.4 (2011).
- (2011)
- Tada, M.¹ Sakamoto, T.² Miyamura, M.³ Banno, N.⁴ Okamoto, K.⁵ Iguchi, N.⁶ Nohisa, T.⁷ Hada, H.⁸

4
- 84855921198
- S. Menzel, U. Böttger, and R. Waser, J. Appl. Phys. 111, 014501 (2012).
- (2012) J. Appl. Phys. , vol.111 , pp. 014501
- Menzel, S.¹ Böttger, U.² Waser, R.³

5
- 84886642327
- S. Menzel and R. Waser, Nanoscale 22, 11003-11010 (2013).
- (2013) Nanoscale , vol.22 , pp. 11003-11010
- Menzel, S.¹ Waser, R.²

6
- 84902844035
- 2011 IEEE International Electron Devices Meeting (IEDM) 17.2.1-17.2.4
- D. Ielmini, 2011 IEEE International Electron Devices Meeting (IEDM), pp. 17.2.1-17.2.4 (2011).
- (2011)
- Ielmini, D.¹

7
- 84876740438
- S. Menzel, S. Tappertzhofen, R. Waser, and I. Valov, Phys. Chem. Chem. Phys. 15, 6945-6952 (2013).
- (2013) Phys. Chem. Chem. Phys. , vol.15 , pp. 6945-6952
- Menzel, S.¹ Tappertzhofen, S.² Waser, R.³ Valov, I.⁴

8
- 84902793887
- Resistive switching in electrochemical metallization memory cells, Ph.D. Thesis, RWTH Aachen, Germany
- C. Schindler, Resistive switching in electrochemical metallization memory cells, Ph.D. Thesis, RWTH Aachen, Germany (2009).
- (2009)
- Schindler, C.¹

9
- 84882425713
- T. Liu, Y. Kang, S. El-Helw, T. Potnis, and M. Orlowski, Jpn. J. Appl. Phys. 52, 084202 (2013).
- (2013) Jpn. J. Appl. Phys. , vol.52 , pp. 084202
- Liu, T.¹ Kang, Y.² El-Helw, S.³ Potnis, T.⁴ Orlowski, M.⁵

10
- 79952485074
- Y. Bernard, V. T. Renard, P. Gonon, and V. Jousseaume, Microelectron. Eng. 88, 814-816 (2011).
- (2011) Microelectron. Eng. , vol.88 , pp. 814-816
- Bernard, Y.¹ Renard, V.T.² Gonon, P.³ Jousseaume, V.⁴

11
- 79955548342
- S. Yu and H.-S. Wong, IEEE Trans. Electron Devices 58, 1352-1360 (2011).
- (2011) IEEE Trans. Electron Devices , vol.58 , pp. 1352-1360
- Yu, S.¹ Wong, H.-S.²

12
- 84864114922
- 2012 4th IEEE International Memory Workshop (IMW), DOI 10.1109/IMW.2012.6213680
- G. Palma, E. Vianello, C. Cagli, G. Molas, M. Reyboz, F. Longnos, and F. Dahmani, 2012 4th IEEE International Memory Workshop (IMW), DOI 10.1109/IMW.2012.6213680 (2012).
- (2012)
- Palma, G.¹ Vianello, E.² Cagli, C.³ Molas, G.⁴ Reyboz, M.⁵ Longnos, F.⁶ Dahmani, F.⁷

13
- 9144258943
- J. G. Simmons, J. Appl. Phys. 34, 1793-1803 (1963).
- (1963) J. Appl. Phys. , vol.34 , pp. 1793-1803
- Simmons, J.G.¹

14
- 21444436092
- R. Corless, G. Gonnet, D. Hare, D. Jeffrey, and D. Knuth, Adv. Comput. Math. 5, 329-359 (1996).
- (1996) Adv. Comput. Math. , vol.5 , pp. 329-359
- Corless, R.¹ Gonnet, G.² Hare, D.³ Jeffrey, D.⁴ Knuth, D.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.