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Volumn 14, Issue 6, 2014, Pages 3235-3240

High brightness InP micropillars grown on silicon with fermi level splitting larger than 1 eV

Author keywords

III V on Si; Micropillars; nanowires; photoluminescence; photovoltaics; solar cells

Indexed keywords

DOPING (ADDITIVES); FERMI LEVEL; LUMINANCE; NANOSTRUCTURED MATERIALS; NANOWIRES; OPEN CIRCUIT VOLTAGE; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SILICON; SOLAR CELLS;

EID: 84902285729     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl500621j     Document Type: Article
Times cited : (22)

References (35)
  • 18
  • 25
    • 84902247917 scopus 로고    scopus 로고
    • In 55th Electronic Materials Conference, South Bend, IN, June 26-28.
    • Li, K.; Tran, T.; Ng, K. W.; Sun, H.; Lu, F. L.; Chang-Hasnain, C. J. In 55th Electronic Materials Conference, South Bend, IN, June 26-28, 2013.
    • (2013)
    • Li, K.1    Tran, T.2    Ng, K.W.3    Sun, H.4    Lu, F.L.5    Chang-Hasnain, C.J.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.