Green emission in carbon doped ZnO films

AIP Advances

Volumn 4, Issue 6, 2014, Pages

  Tseng, L T ^a   Yi, J B ^a   Zhang, X Y ^a   Xing, G Z ^a   Fan, H M ^b   Herng, T S ^c   Luo, X ^a   Ionescu, M ^d   Ding, J ^c   Li, S ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b NORTHWEST UNIVERSITY   (China)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARBON FILMS; DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; II-VI SEMICONDUCTORS; MAGNETIC MOMENTS; METALLIC FILMS; SINGLE CRYSTALS; TEMPERATURE; ZINC OXIDE;

C-DOPED ZNO; COMPLEX DEFECTS; DOPED ZNO; EMISSION BEHAVIOR; GREEN EMISSIONS; INTERSTITIALS; LOW TEMPERATURE PHOTOLUMINESCENCE; ZNO FILMS;

ZINC;

EID: 84902097226     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4882172     Document Type: Article

References (34)

1. V. A. Coleman and C. Jagadish, in Zinc Oxide Bulk, Thin Films and Nanostructures, edited by J. Chennupati and P. Stephen (Elsevier Science Ltd, Oxford, 2006), p. 1.
2. N. H. Nickel and E. Terukov, Zinc Oxide-a Material for Micro- and Optoelectronic Applications (Springer, 2005).
3. K. Ellmer, A. Klein, and B. Rech, Transparent Conductive Zinc Oxide: Basics and Applications in Thin Film Solar Cells (Springer, 2008).
4. Y. Y. Lai, Y. P. Lan, and T. C. Lu, Light Sci. Appl. 2, e76 (2013). 10.1038/lsa.2013.32
5. J. B. Yi, C. C. Lim, Y. P. Feng, J. Ding, G. Z. Xing, H. M. Fan, L. H. Van, S. L. Huang, K. S. Yang, X. L. Huang, X. B. Qin, B. Y. Wang, T. Wu, L. Wang, H. T. Zhang, X. Y. Gao, T. Liu, and A. T. S. Wee, Phys. Rev. Lett. 104, 137201 (2010). 10.1103/PhysRevLett.104.137201
6. X. Jiang, F. L. Wong, M. K. Fung, and S. T. Lee, Appl. Phys. Lett. 83, 1875 (2003). 10.1063/1.1605805
7. B. Lin, Z. Fu, and Y. Jia, Appl. Phys. Lett. 79, 943 (2001). 10.1063/1.1394173
8. K. Matsumoto, K. Kuriyama, and K. Kushida, Nuclear Instru. Methods Phys. Res. Sec. B 267, 1568 (2009). 10.1016/j.nimb.2009.01.128
9. Z. G. Wang, X. T. Zu, S. Z. Yang, and L. M. Wang, J. Mater. Sci. 41, 3729 (2006). 10.1007/s10853-006-7180-9
10. Y. Hu and H. J. Chen, Mater. Res. Bul. 43, 2153 (2008). 10.1016/j.materresbull.2007.09.002
11. R. J. Mendelsberg, J. Kennedy, S. M. Durbin, and R. J. Reeves, Current Appl. Phys. 8, 283 (2008). 10.1016/j.cap.2007.10.016
12. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, J. Appl. Phys. 98, 041301 (2005). 10.1063/1.1992666
13. Y. Y. Tay, T. T. Tan, M. H. Liang, F. Boey, and S. Li, Phys. Chem. Chem. Phys. 12, 6008 (2001). 10.1039/b926427b
14. X. Peng, J. Xu, H. Zang, B. Wang, and Z. Wang, J. Luminescence 128, 297 (2008). 10.1016/j.jlumin.2007.07.016
15. N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, and G. Cantwell, Appl. Phys. Lett. 81, 622 (2002). 10.1063/1.1494125
16. Y. H. Lu, Z. X. Hong, Y. P. Feng, and S. P. Russo, Appl. Phys. Lett. 96, 091914 (2010). 10.1063/1.3340934
17. Y. G. Wang, S. P. Lau, H. W. Lee, S. F. Yu, B. K. Tay, X. H. Zhang, and H. H. Hng, J. Appl. Phys. 94, 354 (2003). 10.1063/1.1577819
18. J. C. Moore, L. R. Covington, and R. Stansell, Physica Status Solidi A 209, 741 (2012). 10.1002/pssa.201127613
19. H. Pan, J. B. Yi, J. Y. Lin, Y. P. Feng, J. Ding, L. H. Van, and J. H. Yin, Phys. Rev. Lett. 99, 127201 (2007). 10.1103/PhysRevLett.99.127201
20. S. Q. Zhou, Q. Y. Xu, K. Potzger, G. Talut, R. Grotzschel, J. Fassbender, M. Vinnichenko, J. Grenzer, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, and H. Schmidt, Appl. Phys. Lett. 93, 232507 (2008). 10.1063/1.3048076
21. H. B. Zeng, G. T. Due, Y. Li, S. Yang, X. X. Xu, and W. P. Cai, Adv. Func. Mater. 20, 561 (2010). 10.1002/adfm.200901884
22. K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, Appl. Phys. Lett. 68, 403 (1996). 10.1063/1.116699
23. M. S. Kim, K. G. Yim, J. Y. Leem, S. Kim, G. Nam, D. Y. Lee, J. S. Kim, and J. S. Kim, J. Korean Phys. Soc. 59, 2354 (2011). 10.3938/jkps.59.2354
24. J. W. Park, D. H. Kim, S. H. Choi, M. Lee, and D. Lim, J. Korean Phys. Soc. 57, 1482 (2010). 10.3938/jkps.57.84
25. S. M. Sze and K. K. Ng, Physics of semiconductor Devices (Wiley, 2006).
26. M. Caglar, Y. Caglar, S. Aksoy, and S. Ilican, Appl. Surf. Sci. 256, 4966 (2010). 10.1016/j.apsusc.2010.03.010
27. Ü. Özgür and H. Morkoç, in Zinc Oxide Bulk, Thin Films and Nanostructures, edited by J. Chennupati and P. Stephen (Elsevier Science Ltd, Oxford, 2006), p. 175.
28. S. A. Studenikin, M. Cocivera, W. Kellner, and H. Pascher, J. Luminescence 91, 223 (2000). 10.1016/S0022-2313(00)00213-1
29. S. K. Tiwari, arXiv:1202.6248 (2012).
30. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002). 10.1063/1.1504875
31. J. Xie, J. Zhang, L. Cong, T. Wang, and B. Huang, Mater. Sci. Eng. B 151, 187 (2008). 10.1016/j.mseb.2008.06.001
32. Y. P. Varshni, Physica Status Solidi B 19, 459 (1967). 10.1002/pssb.19670190202
33. J. Hu and B. C. Pan, J. Chem. Phys. 129, 154706 (2008). 10.1063/1.2993166
34. C.-T. Lee, Mater. 3, 2218 (2010). 10.3390/ma3042218