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Journal of Applied Physics

Volumn 115, Issue 20, 2014, Pages

Suppression of grain boundary relaxation in Zr-doped BiFeO3 thin films

(4) Mukherjee, Somdutta a,b Srivastava, Amar a,c Gupta, Rajeev a Garg, Ashish a

a INDIAN INSTITUTE OF TECHNOLOGY KANPUR (India)

b INDIAN INSTITUTE OF SCIENCE (India)

c NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GRAIN BOUNDARIES; SEMICONDUCTOR DOPING; THIN FILMS;

CHEMICAL SOLUTIONS; CONDUCTION PROCESS; DC CONDUCTIVITY; DIELECTRIC STUDIES; GRAIN BOUNDARY RELAXATION; HIGH-TEMPERATURE REGIME; TEMPERATURE DEPENDENT; TEMPERATURE INDEPENDENTS;

ZIRCONIUM;

EID: 84902003452 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4879247 Document Type: Article

Times cited : (17)

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