The photoluminescence from (Eu, Yb) co-doped silicon-rich Si oxides

Journal of Luminescence

Volumn 154, Issue , 2014, Pages 339-344

  Heng, Chenglin ^a   Su, Wenyong ^a   Zhang, Qiwei ^a   Ren, Xiaoqian ^b   Yin, Penggan ^b   Pan, Huiping ^c   Yao, Shude ^c   Finstad, Terje G ^d  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

^b BEIHANG UNIVERSITY   (China)

^c PEKING UNIVERSITY   (China)

^d UNIVERSITY OF OSLO   (Norway)

Author keywords

Energy transfer; Eu; Luminescence; Rare earth compounds; Silicon rich oxide; Yb

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ENERGY TRANSFER; EUROPIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LUMINESCENCE; OXIDE FILMS; PHOTOLUMINESCENCE; RARE EARTH COMPOUNDS; RARE EARTHS; YTTERBIUM;

ANNEALING TEMPERATURES; CO-DOPED; PHOTOLUMINESCENCE PROPERTIES; PL INTENSITY; SI OXIDE; SI-RICH OXIDES; SILICON RICH OXIDES;

SILICON COMPOUNDS;

EID: 84901996746     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2014.04.035     Document Type: Article

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