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Volumn 10, Issue 11, 2014, Pages 2245-2250

Epitaxial growth of asymmetrically-doped bilayer graphene for photocurrent generation

Author keywords

asymmetrically doping; bilayer graphene; epitaxial growth; p n junction; photocurrent generation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; SEMICONDUCTOR JUNCTIONS;

EID: 84901855120     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201303696     Document Type: Article
Times cited : (6)

References (39)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.