Electronic and structural characterisation of Cu3BiS3 thin films for the absorber layer of sustainable photovoltaics

Thin Solid Films

Volumn 562, Issue , 2014, Pages 195-199

  Yakushev, M V ^a,b   Maiello, P ^c   Raadik, T ^e   Shaw, M J ^a   Edwards, P R ^a   Krustok, J ^e   Mudryi, A V ^a,d   Forbes, I ^c   Martin, R W ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b INSTITUTE OF METALLURGY   (Russian Federation)

^c NORTHUMBRIA UNIVERSITY   (United Kingdom)

^d INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^e TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

Author keywords

Electronic structure; Photoluminescence; Photoreflectance; Raman spectroscopy; Semiconductors; Solar cells; Thin films

Indexed keywords

ACTIVATION ENERGY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; MAGNETRONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SOLAR CELLS;

ELEMENTAL COMPOSITIONS; EXCITATION MEASUREMENTS; PHOTOLUMINESCENCE SPECTRUM; PHOTOREFLECTANCE; PHOTOREFLECTANCE SPECTRA; STRUCTURAL AND ELECTRONIC PROPERTIES; TEMPERATURE DEPENDENCIES; THIN FILM SOLAR CELLS;

THIN FILMS;

EID: 84901772567     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.04.057     Document Type: Article

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