Formation of Cu 3BiS 3 thin films via sulfurization of Bi-Cu metal precursors

Thin Solid Films

Volumn 520, Issue 16, 2012, Pages 5165-5171

  Colombara, D ^a   Peter, L M ^a   Hutchings, K ^b   Rogers, K D ^b   Schafer S ^c   Dufton, J T R ^a   Islam, M S ^a  

^a University of Bath   (United Kingdom)

^b CRANFIELD UNIVERSITY   (United Kingdom)

^c Enthone GmbH   (Germany)

Author keywords

Availability; Electrodeposition; Photoelectrochemistry; Rapid thermal annealing; Solar cells; Sulfurization; Wittichenite

Indexed keywords

COMPOSITIONAL DIFFERENCE; ELEMENTAL SULFUR; METAL PRECURSOR; PHOTO-ELECTROCHEMISTRY; PHOTOELECTROCHEMICAL PROPERTIES; POTENTIAL LOSS; QUALITY LAYERS; SULFURIZATION; SULFURIZATION TEMPERATURE; THIN FILM PHOTOVOLTAICS; WITTICHENITE;

AVAILABILITY; BISMUTH COMPOUNDS; ELECTROCHEMISTRY; ELECTRODEPOSITION; RAPID THERMAL ANNEALING; SOLAR CELLS; SULFUR; THIN FILMS; VAPORS;

BISMUTH;

EID: 84861750601     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.04.003     Document Type: Article

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