Doping Nature of Native Defects in 1T-TiSe2

Physical Review Letters

Volumn 112, Issue 19, 2014, Pages

  Hildebrand, B ^a   Didiot, C ^a   Novello, A M ^b   Monney, G ^a   Scarfato, A ^b   Ubaldini, A ^b   Berger, H ^c   Bowler, D R ^d   Renner, C ^b   Aebi, P ^a  

^a UNIVERSITY OF FRIBOURG   (Switzerland)

^b UNIVERSITY OF GENEVA   (Switzerland)

^c EPFL   (Switzerland)

^d UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY WAVES; DEFECTS; SCANNING TUNNELING MICROSCOPY;

AB INITIO CALCULATIONS; LAYERED MATERIAL; NATIVE DEFECT; SELF-DOPING; SINGLE ATOMS; STRUCTURAL DEFECT; TEMPERATURE-DEPENDENT RESISTIVITY; TI ATOMS;

DOPING (ADDITIVES);

EID: 84900992762     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.112.197001     Document Type: Article

References (30)

1. F. Di Salvo, D. Moncton and J. Waszczak, Phys. Rev. B 14, 4321 (1976). PLRBAQ 0556-2805 10.1103/PhysRevB.14.4321
2. A.F. Kusmartseva, B. Sipos, H. Berger, L. Forró, and E. Tutiš, Phys. Rev. Lett. 103, 236401 (2009). PRLTAO 0031-9007 10.1103/PhysRevLett.103.236401
3. J.C.E. Rasch, T. Stemmler, B. Müller, L. Dudy and R. Manzke, Phys. Rev. Lett. 101, 237602 (2008). PRLTAO 0031-9007 10.1103/PhysRevLett.101.237602
4. D. Greenaway and R. Nitsche, J. Phys. Chem. Solids 26, 1445 (1965). JPCSAW 0022-3697 10.1016/0022-3697(65)90043-0
5. T. Pillo, J. Hayoz, H. Berger, F. Lévy, L. Schlapbach, and P. Aebi, Phys. Rev. B 61, 16213 (2000). PRBMDO 0163-1829 10.1103/PhysRevB.61.16213
6. J.A. Wilson, Phys. Status Solidi (b) 86, 11 (1978). PSSBBD 0370-1972 10.1002/pssb.2220860102
7. H. Cercellier, C. Monney, F. Clerc, C. Battaglia, L. Despont, M.G. Garnier, H. Beck, P. Aebi, L. Patthey, H. Berger, and L. Forró, Phys. Rev. Lett. 99, 146403 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.99.146403 (Pubitemid 47531668)
8. C. Monney, G. Monney, P. Aebi, and H. Beck, Phys. Rev. B 85, 235150 (2012). PRBMDO 1098-0121 10.1103/PhysRevB.85.235150
9. P.M. Koenraad and M.E. Flatté, Nat. Mater. 10, 91 (2011). NMAACR 1476-1122 10.1038/nmat2940
10. The term of doping is taken in the general sense of the modification of electronic properties induced by the introduction (intentional or accidental) of impurities or defects into a pure compound (not necessarily in a well-defined semiconductor).
11. E. Morosan, H.W. Zandbergen, B.S. Dennis, J.W.G. Bos, Y. Onose, T. Klimczuk, a.P. Ramirez, N.P. Ong, and R.J. Cava, Nat. Phys. 2, 544 (2006). NPAHAX 1745-2473 10.1038/nphys360 (Pubitemid 44172630)
12. S.R. Schofield, N.J. Curson, M.Y. Simmons, F.J. Rueß, T. Hallam, L. Oberbeck, and R.G. Clark, Phys. Rev. Lett. 91, 136104 (2003). PRLTAO 0031-9007 10.1103/PhysRevLett.91.136104
13. S. Kim, M. Ye, K. Kuroda, Y. Yamada, E.E. Krasovskii, E.V. Chulkov, K. Miyamoto, M. Nakatake, T. Okuda, Y. Ueda, K. Shimada, H. Namatame, M. Taniguchi, and A. Kimura, Phys. Rev. Lett. 107, 056803 (2011). PRLTAO 0031-9007 10.1103/PhysRevLett.107.056803
14. Z. Alpichshev, R.R. Biswas, A.V. Balatsky, J.G. Analytis, J.-H. Chu, I.R. Fisher, and A. Kapitulnik, Phys. Rev. Lett. 108, 206402 (2012). PRLTAO 0031-9007 10.1103/PhysRevLett.108.206402
15. C. Kendrick, G. LeLay and A. Kahn, Phys. Rev. B 54, 17877 (1996). PRBMDO 0163-1829 10.1103/PhysRevB.54.17877
16. M. Kuznetsov, I. Ogorodnikov, A. Vorokh, A. Rasinkin, and A. Titov, Surf. Sci. 606, 1760 (2012). SUSCAS 0039-6028 10.1016/j.susc.2012.06.008
17. G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169 (1996). PRBMDO 0163-1829 10.1103/PhysRevB.54.11169
18. G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993). PRBMDO 0163-1829 10.1103/PhysRevB.47.558
19. G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1999). PRBMDO 0163-1829 10.1103/PhysRevB.59.1758
20. J.P. Perdew, K. Burke and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). PRLTAO 0031-9007 10.1103/PhysRevLett.77.3865
21. J. Tersoff and D.R. Hamann, Phys. Rev. Lett. 50, 1998 (1983). PRLTAO 0031-9007 10.1103/PhysRevLett.50.1998
22. W. Hofer, Prog. Surf. Sci. 71, 147 (2003). PSSFBP 0079-6816 10.1016/S0079-6816(03)00005-4
23. The CDW gap (smaller than 50 meV) opens just below the Fermi energy, and the effects of backfolding of (Equation presented)-derived bands due to the new Brillouin zone are only observable close to the Fermi energy. The detailed discussion on the perturbation of the CDW state by the different defects is beyond the scope of this Letter.
24. In this study, the donor and acceptor terms generally used for (in)gap states induced by respectively (Equation presented) and (Equation presented) dopants in semiconductors have to be interpreted as valence or conduction impurity states.
25. J. Wilson and A. Yoffe, Adv. Phys. 18, 193 (1969). ADPHAH 0001-8732 10.1080/00018736900101307
26. C.G. Slough, B. Giambattista, A. Johnson, W.W. McNairy, C. Wang and R.V. Coleman, Phys. Rev. B 37, 6571 (1988). PRBMDO 0163-1829 10.1103/PhysRevB.37.6571
27. When not just due to a simple topographic effect, protrusions or depletions can correspond to donor or acceptor states [30].
28. M.M. May, C. Brabetz, C. Janowitz, and R. Manzke, J. Electron Spectrosc. Relat. Phenom. 184, 180 (2011). JESRAW 0368-2048 10.1016/j.elspec.2011.01.001
29. C. Monney, H. Cercellier, F. Clerc, C. Battaglia, E.F. Schwier, C. Didiot, M.G. Garnier, H. Beck, P. Aebi, H. Berger, L. Forró, and L. Patthey, Phys. Rev. B 79, 045116 (2009). PRBMDO 1098-0121 10.1103/PhysRevB.79. 045116
30. S. Loth, M. Wenderoth, K. Teichmann, and R. Ulbrich, Solid State Commun. 145, 551 (2008). SSCOA4 0038-1098 10.1016/j.ssc.2008.01.004