Surface effects on the electrostatic potential generated in a bent gallium nitride nanowire

IEEE Transactions on Nanotechnology

Volumn 13, Issue 3, 2014, Pages 600-606

  Zhang, Jin ^a   Wang, Chengyuan ^a   Adhikari, Sondipon ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Electrostatic potential; finite element analysis; gallium nitride (GaN) nanowire (NW); molecular dynamics; surface effect

Indexed keywords

COMPOSITE BEAMS AND GIRDERS; CRYSTALLOGRAPHY; ELASTICITY; ELECTROSTATICS; FINITE ELEMENT METHOD; MOLECULAR DYNAMICS; NANOWIRES; PIEZOELECTRICITY;

ELECTROSTATIC POTENTIALS; EQUIVALENT MATERIAL PROPERTIES; FINITE ELEMENT TECHNIQUES; GALLIUM NITRIDE NANOWIRES; MOLECULAR DYNAMICS SIMULATIONS; POTENTIAL DISTRIBUTIONS; SURFACE EFFECT; SURFACE PIEZOELECTRICITIES;

GALLIUM NITRIDE;

EID: 84900857204     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2014.2313837     Document Type: Article

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