Influence of dopant distribution on the plasmonic properties of indium tin oxide nanocrystals

Journal of the American Chemical Society

Volumn 136, Issue 19, 2014, Pages 7110-7116

  Lounis, Sebastien D ^a,b   Runnerstrom, Evan L ^a,c   Bergerud, Amy ^a,c   Nordlund, Dennis ^d   Milliron, Delia J ^a,e  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Lawrence Berkeley National Laboratory   (United States)

^d SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^e The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPTH PROFILING; PHOTOELECTRONS; PLASMONS; SEMICONDUCTOR DOPING; SURFACE DEFECTS; SURFACE PLASMON RESONANCE; SURFACE SEGREGATION; TIN; X RAY PHOTOELECTRON SPECTROSCOPY;

COLLOIDAL NANOCRYSTALS; COLLOIDAL SYNTHESIS; LOCALIZED SURFACE PLASMON RESONANCE; METAL OXIDE NANOCRYSTALS; OPTOELECTRONIC PROPERTIES; OXYGEN INTERSTITIALS; PLASMONIC PROPERTIES; SEMICONDUCTOR NANOCRYSTALS;

NANOCRYSTALS;

ELEMENT; INDIUM TIN OXIDE; NANOCRYSTAL; TIN;

ADDITION REACTION; ARTICLE; COLLOID; ELECTRON; IONIZATION; OPTICS; PHOTON; SIMULATION; SURFACE PLASMON RESONANCE; SURFACE PROPERTY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84900815507     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja502541z     Document Type: Article

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