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Volumn 49, Issue 4 PART 2, 2010, Pages
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Current reduction mechanism in organic thin film transistors
a a a a
a
TOYO UNIVERSITY
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CHANNEL INTERFACE;
CHANNEL REGION;
CONTACT REGIONS;
CONTINUITY EQUATIONS;
CURRENT REDUCTION;
DEVICE PERFORMANCE;
DEVICE SIMULATIONS;
HEAVILY DOPED;
HIGH POTENTIAL;
IMPURITY CONCENTRATION;
ORGANIC SEMICONDUCTOR;
ORGANIC THIN FILM TRANSISTORS;
POISSON'S EQUATION;
POTENTIAL DISTRIBUTIONS;
TECHNOLOGY DEVELOPMENT;
BIOACTIVITY;
CARRIER CONCENTRATION;
CARRIER MOBILITY;
FIELD EFFECT TRANSISTORS;
PHOTOTRANSISTORS;
POISSON DISTRIBUTION;
POISSON EQUATION;
TECHNOLOGICAL FORECASTING;
THIN FILM TRANSISTORS;
THIN FILMS;
CURRENT VOLTAGE CHARACTERISTICS;
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EID: 77952709581
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.49.04DK01 Document Type: Article |
Times cited : (7)
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References (16)
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