Exciton drift in semiconductors under uniform strain gradients: Application to bent ZnO microwires

ACS Nano

Volumn 8, Issue 4, 2014, Pages 3412-3420

  Fu, Xuewen ^a   Jacopin, Gwenole ^b   Shahmohammadi, Mehran ^b   Liu, Ren ^a   Benameur, Malik ^b   Ganière, Jean Daniel ^b   Feng, Ji ^a   Guo, Wanlin ^c   Liao, Zhi Min ^a   Deveaud, Benoit ^b   Yu, Dapeng ^a  

^a PEKING UNIVERSITY   (China)

^b EPFL   (Switzerland)

^c NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

Author keywords

exciton dynamics; pure bending strain; strain gradient; time resolved cathodoluminescence; ZnO microwire

Indexed keywords

CATHODOLUMINESCENCE; DYNAMICS; ELECTRONIC STRUCTURE; SEMICONDUCTOR DOPING; ZINC OXIDE;

EXCITON DYNAMICS; MICROWIRE; PURE BENDING; STRAIN GRADIENTS; TIME-RESOLVED;

EXCITONS;

EID: 84899465471     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn4062353     Document Type: Article

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