Polymethyl methacrylate/hydrogen silsesquioxane bilayer resist electron beam lithography process for etching 25nm wide magnetic wires

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 32, Issue 2, 2014, Pages

  Currivan, Jean Anne ^a,c   Siddiqui, Saima ^a   Ahn, Sungmin ^b   Tryputen, Larysa ^b   Beach, Geoffrey S D ^b   Baldo, Marc A ^a   Ross, Caroline A ^b  

^a Department of Electrical Engineering and Computer Science   (United States)

^b Massachusetts Institute of Technology   (United States)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; MULTILAYER FILMS; POLYMETHYL METHACRYLATES; COBALT; ELECTRON BEAMS; FILM PREPARATION; ION BEAMS; LITHOGRAPHY; MAGNETISM;

BILAYER RESIST PROCESS; HYDROGEN SILSESQUIOXANE; ION BEAM ETCHING; MAGNETIC QUALITY; METALLIC THIN FILMS; OUT-OF-PLANE MAGNETIC ANISOTROPY; ROOT MEAN SQUARE; SILSESQUIOXANES; HIGH RESOLUTION RESISTS;

ELECTRON BEAM LITHOGRAPHY;

EID: 84898995031     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4867753     Document Type: Article

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