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Angewandte Chemie - International Edition

Volumn 53, Issue 17, 2014, Pages 4437-4441

Storage of electrical information in metal-organic-framework memristors

(3) Yoon, Seok Min a Warren, Scott C a Grzybowski, Bartosz A a

a NORTHWESTERN UNIVERSITY (United States)

Author keywords

memristors; metal organic frameworks; negative differential resistance; non volatile memory; resistive random access memory

Indexed keywords

CRYSTALLINE MATERIALS; DATA STORAGE EQUIPMENT; ELECTROLYTES; JAVA PROGRAMMING LANGUAGE; MEMRISTORS; METALS; PASSIVE FILTERS;

HIGH CONDUCTIVITY; IONIC ELECTROLYTES; METAL ORGANIC FRAMEWORK; NEGATIVE DIFFERENTIAL RESISTANCES; NON-VOLATILE MEMORY; PASSIVATING LAYER; RESISTIVE RANDOM ACCESS MEMORY; SILVER ELECTRODE;

RANDOM ACCESS STORAGE;

EID: 84898979453 PISSN: 14337851 EISSN: 15213773 Source Type: Journal
DOI: 10.1002/anie.201309642 Document Type: Article

Times cited : (145)

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