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Volumn 53, Issue 17, 2014, Pages 4437-4441

Storage of electrical information in metal-organic-framework memristors

Author keywords

memristors; metal organic frameworks; negative differential resistance; non volatile memory; resistive random access memory

Indexed keywords

CRYSTALLINE MATERIALS; DATA STORAGE EQUIPMENT; ELECTROLYTES; JAVA PROGRAMMING LANGUAGE; MEMRISTORS; METALS; PASSIVE FILTERS;

EID: 84898979453     PISSN: 14337851     EISSN: 15213773     Source Type: Journal    
DOI: 10.1002/anie.201309642     Document Type: Article
Times cited : (145)

References (38)
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    • Pinched hysteresis is characteristic of a memristor. Of the twenty devices tested, 90 % exhibited this behavior; the remaining 10 % exhibited either no current or other non-memristive behavior, which is likely to be due to the presence of structural defects (for example, cracks) within the MOF that limit charge transport.
    • Pinched hysteresis is characteristic of a memristor. Of the twenty devices tested, 90 % exhibited this behavior; the remaining 10 % exhibited either no current or other non-memristive behavior, which is likely to be due to the presence of structural defects (for example, cracks) within the MOF that limit charge transport.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.