Enhancing the Cu2ZnSnS4 solar cell efficiency by back contact modification: Inserting a thin TiB2 intermediate layer at Cu2ZnSnS4/Mo interface

Applied Physics Letters

Volumn 104, Issue 5, 2014, Pages

  Liu, Fangyang ^a   Sun, Kaiwen ^b   Li, Wei ^a   Yan, Chang ^a   Cui, Hongtao ^a   Jiang, Liangxing ^b   Hao, Xiaojing ^a   Green, Martin A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b CENTRAL SOUTH UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; EFFICIENCY; ELECTRIC RESISTANCE; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; THIN FILM SOLAR CELLS; THIN FILMS; TIN COMPOUNDS; TITANIUM COMPOUNDS; ZINC COMPOUNDS;

CONTACT INTERFACE; CRYSTAL QUALITIES; DEVICE EFFICIENCY; DEVICE PERFORMANCE; INTERMEDIATE LAYERS; MINIMAL THICKNESS; SERIES RESISTANCES; SOLAR CELL EFFICIENCIES;

BORON COMPOUNDS;

EID: 84898942142     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4863736     Document Type: Article

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