Stray inductance reduction of commutation loop in the P-cell and N-cell-based IGBT phase leg module

IEEE Transactions on Power Electronics

Volumn 29, Issue 7, 2014, Pages 3616-3624

  Li, Shengnan ^a   Tolbert, Leon M ^b   Wang, Fei ^b   Peng, Fang Zheng ^c  

^a Franklin Electric   (United States)

^b University of Tennessee   (United States)

^c Michigan State University   (United States)

Author keywords

Commutation loop; insulated gate bipolar transistor (IGBT); N cell; P cell; phase leg module; stray inductance

Indexed keywords

CURRENT COMMUTATION; ELECTROMAGNETIC SIMULATION; IMPEDANCE ANALYZER; N-CELL; P-CELL; PHASE-LEG MODULE; STRAY INDUCTANCES; SWITCHING BEHAVIORS;

CYTOLOGY; FINITE ELEMENT METHOD; INDUCTANCE; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

CELLS;

EID: 84897699358     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2279258     Document Type: Article

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