-
1
-
-
49249116009
-
DC and transient performance of 4H-SiC double-implant MOSFETs
-
P. Losee, K. Matocha, S. Arthur, J. Nasadoski, Z. Stum, J. Garrett, M. Schutten, G. Dunne, L. Stevanovic, "DC and transient performance of 4H-SiC double-implant MOSFETs", IEEE Transactions on Electron Devices, v. 55, pp. 1824-1829, 2008.
-
(2008)
IEEE Transactions on Electron Devices
, vol.55
, pp. 1824-1829
-
-
Losee, P.1
Matocha, K.2
Arthur, S.3
Nasadoski, J.4
Stum, Z.5
Garrett, J.6
Schutten, M.7
Dunne, G.8
Stevanovic, L.9
-
2
-
-
77955449905
-
100 amp, 1000 volt class 4H- Silicon carbide MOSFET modules
-
P. Losee, K. Matocha, S. Arthur, E. Delgado, R. Beaupre, A. Pautsch, R. Rao, J. Nasadoski, J. Garrett, Z. Stum, L. Stevanovic, R. Conte and K. Monaghan, "100 amp, 1000 volt class 4H- silicon carbide MOSFET modules," Materials Science Forum Vols. 615-617 (2009) pp 899-902.
-
(2009)
Materials Science Forum
, vol.615-617
, pp. 899-902
-
-
Losee, P.1
Matocha, K.2
Arthur, S.3
Delgado, E.4
Beaupre, R.5
Pautsch, A.6
Rao, R.7
Nasadoski, J.8
Garrett, J.9
Stum, Z.10
Stevanovic, L.11
Conte, R.12
Monaghan, K.13
-
3
-
-
0027262873
-
Low-inductance module constructed for high-speed, high current IGBT module suitable for electric vehicle application
-
Tokyo, Japan
-
th International Symposium on Power Semiconductor Devices and ICs, ISPSD 1993, pp. 292-295, Tokyo, Japan, 1993.
-
(1993)
th International Symposium on Power Semiconductor Devices and ICs, ISPSD 1993
, pp. 292-295
-
-
Tsunoda, T.1
Matsuda, T.2
Nakadaira, Y.3
Nakayama, H.4
Sasada, Y.5
-
4
-
-
0032310015
-
Low inductance, explosion robust IGBT modules in high power inverter applications
-
IAS
-
L. Schnur, G. Debled, S. Dewar, J. Marous, "Low inductance, explosion robust IGBT modules in high power inverter applications," IEEE 1998 Industry Applications Society Conference, IAS 1998, pp. 1056-1060.
-
(1998)
IEEE 1998 Industry Applications Society Conference
, pp. 1056-1060
-
-
Schnur, L.1
Debled, G.2
Dewar, S.3
Marous, J.4
-
5
-
-
0033351924
-
Analysis and measurement of chip current imbalances caused by the structure of bus bars in an IGBT module
-
IAS
-
T. Ohi, T. Horiguchi, T. Okuda, T. Kikunaga, H. Matsumoto, "Analysis and measurement of chip current imbalances caused by the structure of bus bars in an IGBT module," IEEE 1999 Industry Applications Society Conference, IAS 1999, pp. 1775-1779.
-
(1999)
IEEE 1999 Industry Applications Society Conference
, pp. 1775-1779
-
-
Ohi, T.1
Horiguchi, T.2
Okuda, T.3
Kikunaga, T.4
Matsumoto, H.5
-
7
-
-
84876929465
-
Electrical and thermal optimization of an automotive power module family
-
APE 2007, Paris, France, 26-27 September
-
nd International Conference on Automotive Power Electronics, APE 2007, Paris, France, 26-27 September, 2007.
-
(2007)
nd International Conference on Automotive Power Electronics
-
-
Wintrich, A.1
Beckedahl, P.2
Wurm, T.3
-
8
-
-
28444470914
-
High power planar interconnect for high frequency converters
-
EPTC 2004, Singapore
-
th Electronics Packaging Technology Conference, EPTC 2004, pp. 18-24, Singapore, 2004.
-
(2004)
th Electronics Packaging Technology Conference
, pp. 18-24
-
-
Fillion, R.1
Delgado, E.2
Beaupre, R.3
McConnelee, P.4
-
9
-
-
77952151842
-
-
http://www.ansoft.com/products/si/q3d-extractor/
-
-
-
-
10
-
-
77952151205
-
-
http://www.tycoelectronics.com.cn/catalog/minf/en/560?BML=10576,1 7560,17685,17694
-
-
-
-
11
-
-
77952172030
-
Integral Micro-channel Liquid Cooling for Power Electronics
-
APEC 2010, Palm Springs, CA, Feb 21-25
-
th Applied Power Electronics Conference, APEC 2010, Palm Springs, CA, Feb 21-25, 2010.
-
(2010)
th Applied Power Electronics Conference
-
-
Stevanovic, L.D.1
Beaupre, R.A.2
Gowda, A.V.3
Pautsch, A.G.4
Solovitz, S.A.5
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