In-situ nitrogen doping of the TiO2 photocatalyst deposited by PEALD for visible light activity

Plasma Science and Technology

Volumn 16, Issue 3, 2014, Pages 239-243

  Rao, Zhipeng ^a,b,c   Wan, Jun ^a,b,c   Li, Chaobo ^a,b,c   Chen, Bo ^a,b,c   Liu, Jian ^a,b,c   Huang, Chengqiang ^a,b,c   Xia, Yang ^a,b,c  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b Jiaxing Research and Commercialization Center for Microelectronics Equipment   (China)

^c Jiaxing Kemin Electronic Equipment Technologies Co Ltd Zhejiang Institute of Advanced Technology Chinese Academy of Sciences   (China)

Author keywords

in situ; nitrogen plasma; photocatalyst; plasma enhanced atomic layer deposition

Indexed keywords

ATOMIC LAYER DEPOSITION; DEPOSITION; NITROGEN; NITROGEN PLASMA; PHOTOCATALYSTS; PHOTOELECTRONS; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

IN-SITU; IN-SITU DOPING METHODS; N-DOPED TIO; PERFORMANCE TESTS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SUBSTITUTIONAL NITROGEN; UV-VIS SPECTROMETRY; VISIBLE-LIGHT ACTIVITY;

SEMICONDUCTOR DOPING;

EID: 84897425378     PISSN: 10090630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-0630/16/3/12     Document Type: Article

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