Effect of nitrogen doping concentration on the properties of TiO 2 films grown by atomic layer deposition

Materials Science and Engineering: B

Volumn 176, Issue 7, 2011, Pages 596-599

  Cheng, Hsyi En ^a   Chen, Yu Ru ^a   Wu, Wen Tuan ^a   Hsu, Ching Ming ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Electrochemical properties; Microstructure; Thin films; Vapor deposition

Indexed keywords

ATOMIC LAYER DEPOSITION; CHLORINE COMPOUNDS; LIGHT; MICROSTRUCTURE; NITROGEN; OXIDE MINERALS; SEMICONDUCTOR DOPING; TITANIUM DIOXIDE;

ATOMIC-LAYER DEPOSITION; DOPING CONCENTRATION; DOPING LEVELS; N-DOPED; NITROGEN-DOPING; PROPERTY; THIN-FILMS; TIO 2 FILMS; VAPOUR DEPOSITION; VISIBLE LIGHT;

THIN FILMS;

EID: 79953321782     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2011.02.001     Document Type: Article

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