TaOxNy sputtered photoanodes for solar water splitting

Energy Procedia

Volumn 22, Issue , 2012, Pages 119-126

  Leroy, C M ^a   Sanjines, R ^a   Sivula, K ^a   Cornuz, M ^a   Xanthopoulos, N ^a   Laporte, V ^a   Gratzel, M ^a  

^a EPFL   (Switzerland)

Author keywords

Nitrides; Oxynitrides; Sputtering; Tantalum; Water splitting

Indexed keywords

EID: 84897057807     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.05.223     Document Type: Conference Paper

References (13)

1. M. Gratzel, Photoelectrochemical cells, Nature, 414 (2001) 338-344.
2. F. Tessier, R. Marchand, Ternary and higher order rare-earth nitride materials: synthesis and characterization of ionic-covalent oxynitride powders, Journal of Solid State Chemistry, 171 143-151.
3. M. Lerch, J. Janek, K.D. Becker, S. Berendts, H. Boysen, T. Bredow, R. Dronskowski, S.G. Ebbinghaus, M. Kilo, M.W. Lumey, M. Martin, C. Reimann, E. Schweda, I. Valov, H.D. Wiemhöfer, Oxide nitrides: From oxides to solids with mobile nitrogen ions, Progress in Solid State Chemistry, 37 (2009) 81-131.
4. 5 by UPS and Electrochemical Methods, ChemInform, 34 (2003) 1798-1803.
5. 2 under Visible Light Irradiation, J Am Chem Soc, 132 (2010) 11828-11829.
6. A. Ishikawa, T. Takata, J.N. Kondo, M. Hara, K. Domen, Electrochemical Behavior of Thin Ta3N5 Semiconductor Film, The Journal of Physical Chemistry B, 108 (2004) 11049-11053.
7. D. Yokoyama, H. Hashiguchi, K. Maeda, T. Minegishi, T. Takata, R. Abe, J. Kubota, K. Domen, Ta3N5 photoanodes for water splitting prepared by sputtering, Thin Solid Films, 519 (2011) 2087-2092.
8. M. Stavrev, D. Fischer, C. Wenzel, K. Drescher, N. Mattern, Crystallographic and morphological characterization of reactively sputtered Ta, TaN and TaNO thin films, Thin Solid Films, 307 (1997) 79-88.
9. S. Venkataraj, D. Severin, S.H. Mohamed, J. Ngaruiya, O. Kappertz, M. Wuttig, Towards understanding the superior properties of transition metal oxynitrides prepared by reactive DC magnetron sputtering, Thin Solid Films, 502 (2006) 228-234.
10. Y. Ye, R. Lim, J.M. White, High mobility amorphous zinc oxynitride semiconductor material for thin film transistors, Journal of Applied Physics, 106 (2009) 074512-074512-074518.
11. O. Banakh, T. Heulin, P.E. Schmid, H. Le Dreo, I. Tkalcec, F. Levy, P.A. Steinmann, Influence of process parameters on the properties of the tantalum oxynitride thin films deposited by pulsing reactive gas sputtering, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 24 (2006) 328-333.
12. R. Nakamura, T. Tanaka, Y. Nakato, Oxygen Photoevolution on a Tantalum Oxynitride Photocatalyst under Visible-Light Irradiation: How Does Water Photooxidation Proceed on a Metal Oxynitride Surface?, The Journal of Physical Chemistry B, 109 (2005) 8920-8927.
13. J. Brillet, M. Cornuz, F. Le Formal, J.H. Yum, M. Gratzel, K. Sivula, Examining architectures of photoanodephotovoltaic tandem cells for solar water splitting, Journal of Materials Research, 25 (2010) 17-24.