Study and enhance the photovoltaic properties of narrow-bandgap Cu 2SnS 3 solar cell by p-n junction interface modification

Journal of Colloid and Interface Science

Volumn 376, Issue 1, 2012, Pages 327-330

  Chen, Qinmiao ^a,b   Dou, Xiaoming ^a,b,c   Ni, Yi ^a   Cheng, Shuyi ^a   Zhuang, Songlin ^a  

^a UNIVERSITY OF SHANGHAI FOR SCIENCE AND TECHNOLOGY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

^c WASEDA UNIVERSITY   (Japan)

Author keywords

Narrow bandgap Cu 2SnS 3; P n junction interface modification; Photovoltaic properties

Indexed keywords

ABSORBER LAYERS; ABSORBER MATERIAL; BOTTOM CELLS; ELECTRONIC CHARACTERISTICS; FLUORINE DOPED TIN OXIDE; LOW TEMPERATURES; NARROW-BANDGAP CU 2SNS 3; P-N JUNCTION; PHOTOVOLTAIC PROPERTY; SOLAR CELL STRUCTURES; SUPERSTRATES; THIN FILM TANDEMS;

ENERGY GAP; NANOCOMPOSITES; SEMICONDUCTOR JUNCTIONS; TIN; TIN OXIDES;

PHOTOVOLTAIC EFFECTS;

COPPER; FLUORINE; SULFUR; TIN;

ARTICLE; CELLS; CHEMICAL MODIFICATION; CHEMICAL STRUCTURE; CRYSTAL STRUCTURE; LOW TEMPERATURE; P N JUNCTION INTERFACE MODIFICATION; PHASE TRANSITION; PHOTOVOLTAIC PROPERTY; PRIORITY JOURNAL; SOLAR CELL;

COPPER; ELECTRIC POWER SUPPLIES; FLUORINE; SOLAR ENERGY; TIN COMPOUNDS;

EID: 84859751435     PISSN: 00219797     EISSN: 10957103     Source Type: Journal    
DOI: 10.1016/j.jcis.2012.03.015     Document Type: Article

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