C-oriented and {010} facets exposed BiVO4 nanowall films: Template-free fabrication and their enhanced photoelectrochemical properties

Chemistry - An Asian Journal

Volumn 5, Issue 12, 2010, Pages 2515-2523

  Zhou, Min ^a   Zhang, Shudong ^a   Sun, Yongfu ^a   Wu, Changzheng ^a   Wang, Mingtai ^b   Xie, Yi ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INSTITUTE OF PLASMA PHYSICS   (China)

Author keywords

bismuth; heteroepitaxy; nanostructures; photoelectrochemistry; vanadium

Indexed keywords

ACTIVE SURFACES; ATOMIC ARRANGEMENT; ELECTRICAL INTERCONNECTIONS; EXTENDED NETWORKS; HETEROEPITAXY; HYDROTHERMAL METHODS; INDIUM TIN OXIDE GLASS; LATTICE MATCH; LOW-INTENSITY; NANOWALLS; OSTWALD RIPENING PROCESS; PACKING DENSITY; PHOTO-ELECTROCHEMISTRY; PHOTOELECTROCHEMICAL PROPERTIES; SOURCE SIGNALS; SURFACE STATE; TEMPLATE-FREE; TEMPLATE-FREE FABRICATION; VERTICALLY ALIGNED; VISIBLE LIGHT;

BISMUTH; CONDUCTIVE FILMS; ELECTROCHEMISTRY; EPITAXIAL GROWTH; FABRICATION; INDIUM COMPOUNDS; LIGHT SOURCES; NANOSTRUCTURES; OSTWALD RIPENING; OXIDE FILMS; TIN; TIN OXIDES; VANADIUM; VANADIUM ALLOYS;

ITO GLASS;

EID: 78650082656     PISSN: 18614728     EISSN: 1861471X     Source Type: Journal    
DOI: 10.1002/asia.201000452     Document Type: Article

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