Temperature dependence of the spontaneous emission factor in subwavelength semiconductor lasers

IEEE Journal of Quantum Electronics

Volumn 50, Issue 3, 2014, Pages 175-185

  Smalley, Joseph S T ^a   Gu, Qing ^a   Fainman, Yeshaiahu ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Indium gallium arsenide phosphide; laser modes; nanophotonics; nanoscale devices; photoluminescence; quantum well lasers; semiconductor lasers; spontaneous emission

Indexed keywords

EMISSION SPECTRUMS; INDIUM GALLIUM ARSENIDE; NANOSCALE DEVICE; RIGOROUS ANALYSIS; SPONTANEOUS EMISSION FACTOR; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; THERMO-OPTIC COEFFICIENTS;

EMISSION SPECTROSCOPY; LASER MODES; NANOPHOTONICS; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; SPONTANEOUS EMISSION; TEMPERATURE DISTRIBUTION;

QUANTUM WELL LASERS;

EID: 84896812933     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2014.2303075     Document Type: Article

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