Interband transition matrix element and temperature dependence of the lasing threshold for GaN laser structures

Journal of Applied Spectroscopy

Volumn 74, Issue 6, 2007, Pages 878-883

  Burov, L I ^a   Lebedok, E V ^b   Kononenko, V K ^b   Ryabtsev, A G ^a   Ryabtsev, G I ^b  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

Author keywords

Gallium nitride; Lasing threshold; Matrix element; Radiative and nonradiative recombination

Indexed keywords

EID: 42449111640     PISSN: 00219037     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10812-007-0136-2     Document Type: Article

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