Temperature dependence of refractive index change for InGaAs/InGaAsP quantum wells

Information Optoelectronics, Nanofabrication and Testing, IONT 2012

Volumn , Issue , 2012, Pages

  Cui, Jun ^a   Miao, Qingyuan ^a   He, Ping An ^a   Wang, Baolong ^a   Yu, Wenlin ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INDUCED; EFFECT OF TEMPERATURE; INGAAS/INGAASP; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENCE OF REFRACTIVE INDEX; WELL WIDTH;

NANOTECHNOLOGY; TEMPERATURE DISTRIBUTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84879011210     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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3. Shun Lien Chuang, "Physics of Photonic Devices", 2nd ed.(John Wiley & Sons,Inc., Hoboken,2008), Chap.4. Appendix C
4. E. Herbert Li, "Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures" Physica E 5 215-273(2000)
5. Chih-Sheng Chang, Shun Lien Chuang, Jeffrey R. Minch, Wei-chiao W. Fang, Y. K. Chen, T. Tanbun-Ek, "Amplified spontaneous emission spectroscopy in strained Quantum-Well lasers" IEEE J. Sel. Top.Quantum Electron. 1 1100-1107(1995)