Combined Raman scattering/photoluminescence analysis of Cu(In,Ga)Se2 electrodeposited layers

Solar Energy

Volumn 103, Issue , 2014, Pages 89-95

  Insignares Cuello, C ^a   Izquierdo Roca, V ^a   Lopez Garcia J ^a   Calvo Barrio, L ^b   Saucedo, E ^a   Kretzschmar, S ^c   Unold, T ^c   Broussillou, C ^d   Goislard de Monsabert, T ^d   Bermudez, V ^d   Perez Rodriguez A ^a,e  

^a CATALONIA INSTITUTE FOR ENERGY RESEARCH IREC   (Spain)

^b UNIVERSITY OF BARCELONA   (Spain)

^c Helmholtz Association of German Research Centres   (Germany)

^d NEXCIS Photovoltaic Technology   (France)

^e UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Confocal microscopy; Cu(In,Ga)Se2; Photoluminescence; Process monitoring; Raman scattering; Thin film cells

Indexed keywords

AUGER SPECTROSCOPY; CHEMICAL PROFILING; CU (IN ,GA)SE; NON DESTRUCTIVE; NONDESTRUCTIVE ASSESSMENT; PL MEASUREMENTS; SECONDARY PHASIS; THIN FILM CELLS;

CONFOCAL MICROSCOPY; ELECTRODEPOSITION; PHOTOLUMINESCENCE; PROCESS MONITORING; RAMAN SCATTERING; SEMICONDUCTING SELENIUM COMPOUNDS;

GALLIUM;

ABSORPTION; ASSESSMENT METHOD; CALIBRATION; CORRELATION; COST-BENEFIT ANALYSIS; CRYSTALLINITY; EXPERIMENTAL STUDY; LUMINESCENCE; MICROSCOPY; MONITORING;

EID: 84896804867     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2014.02.005     Document Type: Article

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