Improved 750°C epitaxial crystal silicon solar cells through impurity reduction

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2013, Pages 51-53

  Grover, Sachit ^a   Young, David L ^a   Lasalvia, Vincenzo ^a   Li, Jian V ^a   Branz, Howard M ^a   Stradins, Paul ^a   Teplin, Charles W ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

DLTS; Epitaxial silicon; Hot wire CVD; Impurities; Solar cells

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL FILMS; EPITAXIAL GROWTH; IMPURITIES; SILICON; SILICON SOLAR CELLS; SOLAR CELLS; SURFACE ROUGHNESS; WIRE;

EPITAXIAL SILICON; EPITAXIAL SILICON FILMS; FILAMENT TEMPERATURE; HOT WIRE CHEMICAL VAPOR DEPOSITION; HOT WIRE CVD;

CRYSTAL IMPURITIES;

EID: 84896477847     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2013.6744097     Document Type: Conference Paper

References (15)

1. D. L. Young, et. al. "Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells," 37th IEEE PVSC, 2011.
2. I. Gordon, et. al. "8% Efficient Thin-Film polycrystalline-silicon solar cells based on aluminum-induced crystallization and thermal CVD," Prog. Photovolt: Res. Appl., vol. 15, no. 7, pp. 575-586, 2007.
3. S. Gall, et. al. "Polycrystalline silicon Thin-Film solar cells on glass," Solar Energy Materials and Solar Cells, vol. 93, no. 6, pp. 1004-1008, Jun. 2009.
4. C. W. Teplin, et. al. "Pyramidal light trapping and hydrogen passivation for high-efficiency heteroepitaxial (100) crystal silicon solar cells," Energy Environ. Sci., no. 5, p. 8093, 2012.
5. H. M. Branz, et. al. "Hot-wire chemical vapor deposition of epitaxial film crystal silicon for photovoltaics," Thin Solid Films, vol. 519, pp. 4545-4550, Feb. 2011.
6. M. Green, et. al. "Crystalline silicon on glass (CSG) Thin-Film solar cell modules," Sol Energy, vol. 77, no. 6, pp. 857-863, 2004.
7. I. Gordon, et. al. "Three novel ways of making Thin-Film crystalline-silicon layers on glass for solar cell applications," Solar Energy Materials and Solar Cells, vol. 95, pp. S2-S7, May 2011.
8. S. Grover, et. al. "Device Physics of Heteroepitaxial Film c-Si Heterojunction Solar Cells," IEEE J. Photovoltaics, vol. 3, no. 1, pp. 230-234, Jan. 2013.
9. C. W. Teplin, et. al. "Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below 800 °C," Appl. Phys. Lett., vol. 96, p. 201901, 2010.
10. D. C. Bobela, et. al. "Epitaxial crystal silicon absorber layers and solar cells grown at 1. 8 microns per minute," 37th IEEE PVSC, 2011.
11. S. H. Wee, et. al. "Heteroepitaxial film silicon solar cell grown on Ni-W foils," Energy Environ. Sci., vol. 5, pp. 6052-6056, 2012.
12. K. Alberi, et. al. "Material quality requirements for efficient epitaxial film silicon solar cells," Appl. Phys. Lett., vol. 96, p. 073502, 2010.
13. D. V. Lang, "Deep-level transient spectroscopy: A new method to characterize traps in semiconductors," J. Appl. Phys., vol. 45, no. 7, p. 3023, 1974.
14. W. Schröter, et. al. "Bandlike and localized states at extended defects in silicon," Phys. Rev. B, vol. 52, no. 19, pp. 13726-13729, Nov. 1995.
15. D. L. Young, et. al. "600 mV epitaxial crystal silicon solar cells grown on seeded glass" Area 5. 5, 39th PVSC, 2013.