Epitaxial crystal silicon absorber layers and solar cells grown at 1.8 microns per minute

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 002982-002986

  Bobela, David C ^a   Teplin, Charles W ^a   Young, David L ^a   Branz, Howard M ^a   Stradins, Paul ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; CAPITAL COSTS; CELL PRODUCTION; CRYSTAL SILICON; DEVICE PERFORMANCE; DEVICE-QUALITY; EPITAXIAL SILICON; HIGH GROWTH RATE; HIGH RATE; HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGENATION TREATMENT; KEY PARAMETERS; LOW RATES; MESA DEVICES; NANOCRYSTALLINE SI; SUBSTRATE TEMPERATURE; SYSTEM PRESSURE; THICK EPITAXIAL;

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GROWTH RATE; HYDROGEN; HYDROGENATION; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SILICON;

AMORPHOUS SILICON;

EID: 84861050120     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186571     Document Type: Conference Paper

References (8)

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