Synthesis and phase evolutions in layered structure of Ga2S 3 semiconductor thin films on epiready GaAs (111) substrates

ACS Applied Materials and Interfaces

Volumn 6, Issue 5, 2014, Pages 3501-3507

  Liu, H F ^a   Antwi, K K Ansah ^a   Yakovlev, N L ^a   Tan, H R ^a   Ong, L T ^a   Chua, S J ^a   Chi, D Z ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

atom diffusions; laser radiation sensing; phase change; photoluminescence; sulfurization

Indexed keywords

DIFFRACTIVE OPTICS; GALLIUM ARSENIDE; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR LASERS; SUBSTRATES; THIN FILMS;

ATOM DIFFUSION; GAAS-BASED OPTOELECTRONIC DEVICES; HIGH-POWER LASER RADIATION; LASER-RADIATION SENSING; PHASE CHANGE; PHOTOLUMINESCENCE SPECTRUM; STRUCTURAL AND OPTICAL PROPERTIES; SULFURIZATION;

GALLIUM ALLOYS;

EID: 84896362147     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am4056535     Document Type: Article

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