GaAs pseudomorphic HEMT with insulating gate films formed by P 2S5/(NH4)2SX sulfurization of recessed GaAs surface

Semiconductor Science and Technology

Volumn 23, Issue 3, 2008, Pages

  Chiu, Hsien Chin ^a   Huang, Yuan Chang ^a   Chang, Liann Be ^a   Chien, Feng Tso ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; DRAIN CURRENT; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE;

INSULATING GATE FILMS; PULSE MEASUREMENT; SULFURIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 42549155820     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/3/035029     Document Type: Article

References (8)

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