SCOPUS 정보 검색 플랫폼

Volumn 24, Issue 32, 2012, Pages 4445-4450

Stable solution-processed molecular n-channel organic field-effect transistors

(13) Hwang, Do Kyung a Dasari, Raghunath R b,e Fenoll, Mathieu a Alain Rizzo, Valérie d Dindar, Amir a Shim, Jae Won a Deb, Nabankur c Fuentes Hernandez, Canek a Barlow, Stephen b Bucknall, David G c Audebert, Pierre d Marder, Seth R b Kippelen, Bernard a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b GEORGIA INSTITUTE OF TECHNOLOGY (United States)

c Georgia Institute of Technology (United States)

d Ecole Normale Superieure de Cachan (France)

e SOLVAY S A (Belgium)

Author keywords

flexible printed OFETs; organic semiconductor; stability

Indexed keywords

AMBIENT ATMOSPHERE; FLEXIBLE PLASTIC SUBSTRATES; FLEXIBLE PRINTED OFETS; GLASS SUBSTRATES; N-CHANNEL; NAPHTHALENE DIIMIDE; OPERATIONAL STABILITY; SMALL MOLECULES; SOLUTION-PROCESSED; TETRAZINES;

CONVERGENCE OF NUMERICAL METHODS; ELECTRON MOBILITY; ORGANIC FIELD EFFECT TRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; SUBSTRATES; SYNTHESIS (CHEMICAL);

NAPHTHALENE;

IMIDE; NAPHTHALENE DERIVATIVE; NAPHTHALENEDIIMIDE;

ARTICLE; CHEMISTRY; ELECTRODE; ELECTRON; SEMICONDUCTOR; SOLUTION AND SOLUBILITY;

ELECTRODES; ELECTRONS; IMIDES; NAPHTHALENES; SOLUTIONS; TRANSISTORS, ELECTRONIC;

EID: 84864982656 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201201689 Document Type: Article

Times cited : (64)

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