Preparation and characterization of (Au/n-Sn O2 /Si O2 /Si/Al) MIS device for optoelectronic application

International Journal of Optics

Volumn 2013, Issue , 2013, Pages

  Abdul Muhsien, Marwa ^a   Salem, Evan T ^b   Agool, Ibrahim R ^a  

^a MUSTANSIRIYAH UNIVERSITY   (Iraq)

^b UNIVERSITY OF TECHNOLOGY   (Iraq)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; OXIDATION; REGENERATORS; SILICON; TIN;

BARRIER HEIGHTS; INTERFACIAL-LAYER THICKNESS; OPTOELECTRONIC APPLICATIONS; OXIDATION TEMPERATURE; OXIDATION TIME; P-TYPE SILICON; PEAK RESPONSE; RAPID THERMAL OXIDATION;

FILM PREPARATION;

EID: 84896139763     PISSN: 16879384     EISSN: 16879392     Source Type: Journal    
DOI: 10.1155/2013/756402     Document Type: Article

References (34)

1. Gordon R. G., Criteria for choosing transparent conductors. MRS Bulletin 2000 25 8 52 57 2-s2.0-0034251416
2. Kim K. H., Lee S. W., Shin D. W., Park C. G., Effect of antimony addition on electrical and optical properties of tin oxide film. Journal of the American Ceramic Society 1994 77 4 915 921 10.1111/j.1151-2916.1994.tb07247.x
3. Karasawa T., Miyata Y., Electrical and optical properties of indium tin oxide thin films deposited on unheated substrates by d.c. reactive sputtering. Thin Solid Films 1993 223 1 135 139 2-s2.0-0027224790 (Pubitemid 23623782)
4. Lal R., Grover R., Vispute R. D., Viswanathan R., Godbole V. P., Ogale S. B., Sensor activity in pulsed laser deposited and ion implanted tin oxide thin films. Thin Solid Films 1991 206 1-2 88 93 2-s2.0-0026389883 10.1016/0040-6090(91)90398-H
5. 2 thin films during deposition. Materials Science and Engineering B 2004 110 3 240 242 2-s2.0-2942694436 10.1016/j.mseb.2004.01.019
6. 2 films grown by a low-cost CVD technique. Materials Letters 2002 54 2-3 158 163 2-s2.0-0036570491 10.1016/S0167-577X(01)00555-9 (Pubitemid 34506167)
7. 2: Sb. Surface and Coatings Technology 1987 31 1 77 88 2-s2.0-0023382325 (Pubitemid 17658073)
8. 2 alcosols and films prepared by sol-gel dip coating. Journal of Non-Crystalline Solids 2001 284 1-3 61 67 2-s2.0-0035338018 10.1016/S0022-3093(01)00380-5 (Pubitemid 32478731)
9. 2 dopés au platine ou au palladium et utilisés pour la détection des gaz polluants: analyses in-situ des corrélations entre la réponse electrique et le comportement des agrégats métalliques [Ph.D. thesis] 1999 Grenoble, France l'Institut National Polytechnique
10. 2 precursor. Thin Solid Films 2002 402 1-2 71 78 2-s2.0-0036150051 10.1016/S0040-6090(01)01667-4 (Pubitemid 34089146)
11. 2/Si(N) solar cells. Revuedes Energies Renouvel Ables 2008 11 3 379 384
12. 2/n-Si (MIS) Diodes. Proceedings of the 24th International Physics Congress of Turkish Physical Society 2007 Malatya, Turkye
13. 3:Sn thin films deposited by spray pyrolysis. Brazillian Journal of Physics 2006 36 3B
14. Uen T. M., Huang K. F., Chen M. S., Gou Y. S., Preparation and characterization of some tin oxide films. Thin Solid Films 1988 158 1 69 80 2-s2.0-0023981063 (Pubitemid 18589359)
15. Danţuş C., Rusu G. G., Dobromir M., Rusu M., Preparation and characterization of CdO thin films obtained by thermal oxidation of evaporated Cd thin films. Applied Surface Science 2008 255 5 2665 2670 2-s2.0-56949096008 10.1016/j.apsusc.2008.07.176
16. Carlson D. E., Amorphous silicon solar cells. IEEE Transactions on Electron Devices 1977 ED-24 4 449 453 2-s2.0-0017483021
17. 2/n-Si solar cell. Solar Energy 1996 56 4 343 348 2-s2.0-0030118560 10.1016/0038-092X(96) 00289-7 (Pubitemid 27084461)
18. Ko M. C., Meyer G. J., Dynamic quenching of porous silicon excited-states. Chemistry of Materials 1996 8 11 2686 2692 10.1021/cm960247o (Pubitemid 126461111)
19. Holfanman J. P., Introduction to Electronics for Technologestic 1978 New York, NY, USA Houghton Mifflin
20. Kim H.-S., Zouzounis E. C., Xie Y.-H., Effective method for stress reduction in thick porous silicon films. Applied Physics Letters 2002 80 13 2287 2289 2-s2.0-79956054177 10.1063/1.1465130 (Pubitemid 34435241)
21. Herino R., Bomchil G., Barla K., Bertrand C., Ginoux J. L., Porosity and pore size distributions of porous silicon layers. Journal of the Electrochemical Society 1987 134 8 1994 2000 10.1149/1.2100805 (Pubitemid 17659026)
22. Canham L. T., Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Applied Physics Letters 1990 57 article 1046 10 10.1063/1.103561
23. JarimaviČiūtė-Žvalionienė R., Grigaliūnas V., Tamulevičius S., Guobienė A., Fabrication of porous silicon microstructures using electrochemical etching. Materials Science 2003 9 4
24. Enachescu M., Light-emitting porous silicon. Theoretical Study, Journal of Electronic Materials 1995
25. Williams R. H., Metal S/C Interface 1983 New York, NY, USA Elumium Press
26. Budde W., Optical radiation measurement. Physical Detector of the Optical Radiation 1983 41 New York, NY, USA Acadimic press
27. Clement T. S., Hale P. D., Williams D. F., Calibration of sampling scilloscopes with high-speed photodiodes. IEEE Microwave Theory and Techniques Society 2006 54 8 3173 3181 10.1109/TMTT.2006.879135
28. Sze S. M., Physics of Semiconductor Devices 1981 New York, NY, USA Wiley-Interscience
29. Capper P., Elliot C. T., Infrared Detector and Emitters: Materials and Devices 2001 NewYork, NY, USA Harwood Academic Publishers
30. Moss S., Hand Book of Semiconductor 1986 4 chapter 1, 6B Amsterdam, The Netherlands North-Holland 85
31. Vanzeei R., Practical Application of Infrared Techniques 1972 New York, NY, USA John Wiley & Sons
32. 2/Si(N) solar cells. Revue Des Energies Renouvelables 2008 11 3 379 384
33. 2/Si solar cells-heterostructure or schottky-barrier or MIS-type device. Journal of Applied Physics 1978 49 6
34. Sze S. M., Kwok K. N., Physics of Semiconductor Devices 2007 3rd New York, NY, USA Wiley-Interscience