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Volumn 740-742, Issue , 2013, Pages 621-624
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Electrical properties of MOS structures on 4H-SiC (1120) face
a,b
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Author keywords
(11 2 0) face; 4H SiC; Channel mobility; Instability; MOS structure; Oxide reliability; Threshold voltage
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Indexed keywords
MOS DEVICES;
MOSFET DEVICES;
NITROGEN OXIDES;
OXIDATION;
OXIDE SEMICONDUCTORS;
PLASMA STABILITY;
POWER SEMICONDUCTOR DEVICES;
RELIABILITY;
SILICON CARBIDE;
STABILITY;
TEMPERATURE DISTRIBUTION;
THRESHOLD VOLTAGE;
WIDE BAND GAP SEMICONDUCTORS;
4H-SIC;
CHANNEL MOBILITY;
MOS STRUCTURE;
OXIDE RELIABILITY;
POST-OXIDATION ANNEALING;
PYROGENIC OXIDATION;
TEMPERATURE DEPENDENCE;
VTH INSTABILITIES;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 84874088160
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.740-742.621 Document Type: Conference Paper |
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Times cited : (6)
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References (8)
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