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Volumn , Issue , 2003, Pages

Advanced electrical materials and component development

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; NASA; SILICON CARBIDE;

EID: 84896040212     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (23)
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  • 7
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    • September
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    • (1990) IEEE Transactions On Magnetics , vol.26 , Issue.5 , pp. 1397-1402
    • Herzer, G.1
  • 10
    • 84896050980 scopus 로고    scopus 로고
    • Vaccumschmelze, Nanocrystalline Vitroperm 500F
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  • 11
    • 0000924125 scopus 로고    scopus 로고
    • 1 Nanocrystalline Alloys
    • December 15
    • 1 Nanocrystalline Alloys", Journal of Applied Physics, Volume 84, Number 12, December 15, 1998, 6773-6777.
    • (1998) Journal of Applied Physics , vol.84 , Issue.12 , pp. 6773-6777
    • Willard, M.A.1
  • 12
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    • Thin Film Diamond-Like-Carbon Dielectrics
    • Hollywood, CA., June 30-July
    • Wu, Richard L. C., et al, Thin Film Diamond-Like-Carbon Dielectrics, International Power Modulator Conference, Hollywood, CA., June 30-July 3, 2002.
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    • Wu, R.L.C.1
  • 14
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    • Cree,http://www.cree.com/products/power/index.htm
  • 15
    • 84896040198 scopus 로고    scopus 로고
    • Infineon Technologies AG-Products-Silicon Carbide Schottky Diode
    • Infineon Technologies AG-Products-Silicon Carbide Schottky Diode, http://www.infineon.com
  • 16
    • 84896033317 scopus 로고    scopus 로고
    • Microsemi Products >Power Conditioning> Silicon Carbide (SiC) Schottky
    • Microsemi Products >Power Conditioning> Silicon Carbide (SiC) Schottky, http://www.microsemi.com
  • 17
    • 84896049174 scopus 로고    scopus 로고
    • Solid State Devices
    • Solid State Devices, http://www.ssdi-power.com
  • 18
    • 0038426995 scopus 로고    scopus 로고
    • High Temperature Electronics-A Role for Wide Bandgap Semiconductors?
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    • Neudeck, P.G.1    Okojie, R.S.2    Chen, L.3
  • 19
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    • SiC materials-Progress, status, and potential road blocks
    • Powell, J. A., L. B. Rowland, SiC materials-Progress, status, and potential road blocks, Proceedings of the IEEE, Vol. 90, pp. 942-955, June 2002.
    • (2002) Proceedings of the IEEE , vol.90 , pp. 942-955
    • Powell, J.A.1    Rowland, L.B.2
  • 20
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    • Growth of step-free surfaces on device-size (0001) mesas
    • Powell, J. Anthony, et al, Growth of step-free surfaces on device-size (0001) mesas, Applied Physics Letters, Volume 77, Number 10, pp. 1449-1451, 4 September, 2000.
    • (2000) Applied Physics Letters , vol.77 , Issue.10 , pp. 1449-1451
    • Powell, J.A.1
  • 21
    • 0012381558 scopus 로고    scopus 로고
    • Growth of Defect-Free 3C-SiC on 4H-and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy
    • Neudeck, Phillip G., et al, Growth of Defect-Free 3C-SiC on 4H-and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy, Materials Science Forum, Vols. 389-393 (2002) pp. 311-314.
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  • 22
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    • Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC centilevers
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    • Neudeck, P.G.1
  • 23
    • 4243840440 scopus 로고    scopus 로고
    • Homoepitaxial "Web Growth" of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.