Resistive switching behaviour in ZnO and VO2 memristors grown by pulsed laser deposition

Electronics Letters

Volumn 50, Issue 4, 2014, Pages 262-263

  Macaluso, R ^a   Mosca, M ^a   Costanza, V ^a   D'Angelo, A ^a   Lullo, G ^a   Caruso, F ^a   Cali C ^a   Di Franco, F ^a   Santamaria, M ^a   Di Quarto, F ^a  

^a UNIVERSITY OF PALERMO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894097762     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2013.3175     Document Type: Article

References (7)

1. Yang, J.J., Pickett, M.D., Li, X., et al.: Memristive switching mechanism for metal/oxide/metal nanodevices, Nature Nanotechnol., 2008, 3, (7), pp. 429-433
2. Lee, M.-J., Park, Y., Suh, D.-S., et al.: Two series oxide resistors applicable to high speed and high density nonvolatile memory, Adv. Mater., 2007, 19, pp. 3919-3923
3. Seo, Y., Song, M.Y., An, H.-M., and Kim, T.G.: A CMOS-processcompatible ZnO-based charge-trap flash memory, IEEE Electron Device Lett., 2013, 34, (2), pp. 238-240
4. Coy, H., Cabrera, R., Sepúlveda, N., and Fernandez, F.E.: Optoelectronic and all-optical multiple memory states in vanadium dioxide, J. Appl. Phys., 2010, 108, (113115), pp. 1-6
5. Mosca, M., Macaluso, R., Calì, C., et al.: Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition, Thin Solid Films, 2013, 539, pp. 55-59
6. Macaluso, R., Mosca, M., Calì, C., et al.: Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP, J. Appl. Phys., 2013, 113, (164508), pp. 1-7
7. Lu, W., Kim, K.-H., Chang, T., and Gaba, S.: Two-terminal resistive switches (memristors) for memory and logic applications. Design Automation Conf. (ASP-DAC), Yokohama, Japan, January 2011, pp. 217-223