Defect engineering of BiI3 single crystals: Enhanced electrical and radiation performance for room temperature gamma-ray detection

Journal of Physical Chemistry C

Volumn 118, Issue 6, 2014, Pages 3244-3250

  Han, Hyuksu ^a   Hong, Minki ^a   Gokhale, Sasmit S ^b   Sinnott, Susan B ^a   Jordan, Kelly ^b   Baciak, James E ^b   Nino, Juan C ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894077844     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp411201k     Document Type: Article

References (32)

1. Matsumoto, M.; Hitomi, K.; Shoji, T.; Hiratate, Y. Bismuth Tri-Iiodide Crystal for Nuclear Radiation Detectors IEEE Trans. Nucl. Sci. 2002, 49, 2517-2520
2. Lintereur, A. T.; Qiu, W.; Nino, J. C.; Baciak, J. Characterization of Bismuth Tri-Iodide Single Crystals for Wide Band-Gap Semiconductor Radiation Detectors Nucl. Instrum. Methods Phys. Res., Sect. A 2011, 652, 166-169
3. 2 Appl. Phys. Lett. 2006, 88, 011918
4. Ayres, F.; Machado, W. V. M; Justo, J. F.; Assali, L. V. C. Defects in Mercuric Iodide: an APW Investigation Physica B 2003, 340, 918-922
5. Biswas, K.; Du, M. H. First Principles Study of Native Defects in InI J. Appl. Phys. 2011, 109, 113518
6. 2 Solid State Ionics 1986, 20, 217-222
7. Schoonma, J. Role of Anion Vacancy Migration in Lead Halide Photolysis Solid State Commun. 1973, 13, 673-676
8. Bishop, S. R.; Higgins, W.; Ciampi, G.; Churilov, A.; Shah, K. S.; Tuller, L. The Defect and Transport Properties of Donor Doped Single Crystal TlBr J. Electrochem. Soc. 2011, 158, J47-J51
9. 3 (X = As, Sb, Bi) Solids Phys. Rev. B 1998, 58, 14812-14822
10. 3 Z. Kristallogr. Krist. 1966, 123, 67-72
11. 3 System Russ. J. Inorg. Chem. (Engl. Transl.) 1968, 13, 1614-1615
12. Fedorov, P. I.; Dudareva, A. G.; Tsygankova, M. S. Indium Iodide Sytems with Bismuth Iodide and Oxyiodide Russ. J. Inorg. Chem. (Engl. Transl.) 1966, 11, 1292-1293
13. 3 (001): Implications for Electrode Selection ACS Appl. Mater. Interfaces 2011, 3, 1910-1917
14. Blochl, P. E. Projector Augmented-Wave Method Phys. Rev. B 1994, 50, 17953-17979
15. Kresse, G.; Joubert, D. From Ultrasoft Pseudopotentials to the Projector Augmented-Wave Method Phys. Rev. B 1999, 59, 1758-1775
16. Kohn, W.; Sham, L. J. Self-Consistent Equations Including Exchange and Correlation Effects Phys. Rev. 1965, 140, 1133-1138
17. Kresse, G.; Furthmuller, J. Efficient Iterative Schemes for Ab Initio Total-Energy Calculations Using a Plane-Wave Basis Set Phys. Rev. B 1996, 54, 11169-11186
18. Monkhorst, H. J.; Pack, J. D. Special Points for Brillouin-Zone Integrations Phys. Rev. B 1976, 13, 5188-5192
19. Nason, D.; Keller, L. The Growth and Crystallography of Bismuth Tri-Iodide Crystals Grown by Vapor Transport J. Cryst. Growth 1995, 156, 221-226
20. Motsnyi, F. V.; Ishchenko, S. S.; Okulov, S. M.; Bletskan, D. I. Nature of Infrared Photoluminescence and of Doping of Layer Bismuth Iodide Single-Crystals Sov. Phys. Semicond. 1977, 11, 617-620
21. Condeles, J. F.; Lofrano, R. C. Z.; Rosolen, J. M.; Mulato, M. Stoichiometry, Surface and Structural Characterization of Lead Iodide Thin Films Braz. J. Phys. 2006, 36, 320-323
22. 3 Solutions J. Phys. Chem. 1959, 63, 295-297
23. 2 Purification J. Cryst. Growth 1995, 156, 86-90
24. 2 Schottky Barriers Sov. Phys. Semicond. 1975, 8, 1343-1347
25. Shannon, R. D. Revised Effective Ionic-Radii and Systematic Studies of Interatomic Distances in Halides and Chalcogenides Acta Crystallogr., Sect. A 1976, 32, 751-767
26. Singh, D. J. Structure and Optical Properties of High Light Output Halide Scintillators Phys. Rev. B 2010, 82, 155145
27. 3 J. Phys.: Condens. Matter 2008, 20, 325220
28. 2 Gamma-Ray Spectrometers Operating at Room Temperature IEEE Trans. Nucl. Sci. 2004, 51, 1886-1894
29. Eisen, Y.; Shor, A. CdTe and CdZnTe Materials for Room-Temperature X-Ray and Gamma Ray Detectors J. Cryst. Growth 1998, 184, 1302-1312
30. Owens, A.; Peacock, A. Compound Semiconductor Radiation Detectors Nucl. Instrum. Methods Phys. Res., Sect. A 2004, 531, 18-37
31. 2 Detectors: A Comparison Between Planar and Pixelated Electrodes IEEE Trans. Nucl. Sci. 2003, 50, 1220-1224
32. He, Z.; Knoll, G. F.; Wehe, D. K. Direct Measurement of Product of the Electron Mobility and Mean Free Drift Time of CdZnTe Semiconductors Using Position Sensitive Single Polarity Charge Sensing Detectors J. Appl. Phys. 1998, 84, 5566-5569