The defect and transport properties of donor doped single crystal TlBr

Journal of the Electrochemical Society

Volumn 158, Issue 2, 2011, Pages

  Bishop, S R ^a   Higgins, W ^b   Ciampi, G ^b   Churilov, A ^b   Shah, K S ^b   Tuller, H L ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b RADIATION MONITORING DEVICES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATION MIGRATION; CONDUCTIVITY DATA; DONOR-DOPED; ELECTRICAL PROPERTY; ENERGY BANDGAPS; FREQUENCY DEPENDENT IMPEDANCE; HIGH ENERGY RADIATION; ORDERS OF MAGNITUDE; SCHOTTKY; SCHOTTKY DEFECTS; SENSOR PERFORMANCE; THALLIUM BROMIDE; VERTICAL BRIDGMAN METHOD;

BROMINE COMPOUNDS; CRYSTAL GROWTH FROM MELT; DEFECTS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; IONIC CONDUCTIVITY; IONS; LEAD; THALLIUM; TRANSPORT PROPERTIES;

SINGLE CRYSTALS;

EID: 78650717957     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3525243     Document Type: Article

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