First principles study of native defects in InI

Journal of Applied Physics

Volumn 109, Issue 11, 2011, Pages

  Biswas, Koushik ^a   Du, Mao Hua ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANION VACANCY; ATOMIC NUMBERS; CATION VACANCIES; DEEP ELECTRON TRAPS; DEFECT PROPERTY; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; HIGH RESISTIVITY; LARGE BAND; LOW ENERGIES; MOBILITY-LIFETIME PRODUCTS; NATIVE DEFECT; POLARIZATION PHENOMENA; POTENTIAL APPLICATIONS; RADIATION ABSORPTION; RADIATION DETECTION; ROOM TEMPERATURE; ROOM-TEMPERATURE OPERATION; SCHOTTKY DEFECTS;

ATOMS; CALCULATIONS; DETECTORS; ELECTRON MOBILITY; METAL HALIDES; VACANCIES;

DEFECTS;

EID: 79959486768     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3592231     Document Type: Article

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